YJG80GP06B

RoHS YJG80GP06B COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-10V) ● 100% EAS Tested ● 100% ▽VDS Tested -60 V -80 A ＜8.5 mΩ General Description ● Split gate trench MOSFET technology ● Low RDS(on) & FOM ● Excellent stability and uniformity ● Moisture Sensitivity Level 1 ● Epoxy Meets UL 94 V-0 Flammability Rating ● Halogen Free Applications ● Power management ● Portable equipment ■ Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS -60 V Gate-source Voltage VGS ±18 V -12 TA=25℃ -7.5 TA=100℃ Drain Current Pulsed Drain Current Unit ID A TC=25℃ -80 TC =100℃ -50 A Avalanche energy B IDM -320 A EAS 400 mJ 2.5 TA=25℃ 1 TA=100℃ Total Power Dissipation C PD W TC=25℃ 120 TC =100℃ 48 Junction and Storage Temperature Range ℃ -55～+150 TJ ,TSTG ■Thermal resistance Parameter Symbol Typ Max Thermal Resistance Junction-to-Ambient D Steady-State RθJA 40 50 Thermal Resistance Junction-to-Case Steady-State RθJC 0.8 1.04 Units ℃/W ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJG80GP06B F1 YJG80GP06B 5000 10000 100000 13“ reel 1/7 S-E193 Rev.1.4,20-Dec-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJG80GP06B ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -60 - - V VDS=-60V, VGS=0V - - -1 Zero Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V, Tj=150℃ - - -100 IGSS VGS= ±18V, VDS =0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250μA -2 -2.7 -4 V Static Drain-Source On-Resistance RDS(on) VGS=-10V, ID=-20A - 6.5 8.5 mΩ Diode Forward Voltage VSD IS=-20A, VGS=0V - -0.9 -1.3 V Gate resistance RG f=1MHz - 10 - Ω Maximum Body-Diode Continuous Current IS - - -80 A Input Capacitance Ciss - 5450 - Output Capacitance Coss - 900 - Reverse Transfer Capacitance Crss - 65 - Total Gate Charge Qg - 82 - Gate-Source Charge Qgs - 25 - Gate-Drain Charge Qgd - 17 - Reverse Recovery Charge Qrr - 45 - nC trr - 150 - ns Turn-on Delay Time tD(on) - 15 - Turn-on Rise Time tr - 50 - Turn-off Delay Time tD(off) - 135 - - 160 - Static Parameter Gate-Body Leakage Current μA Dynamic Parameters VDS=-30V, VGS=0V, f=1MHz pF Switching Parameters VGS=-10V, VDS=-30V, ID=-20A nC IF=-20A, di/dt=500A/us Reverse Recovery Time Turn-off fall Time VGS=-10V, VDD=-30V, R GEN=1.6Ω， ID=-20A tf ns A. Repetitive rating; pulse width limited by max. junction temperature. B. TJ=25℃, VDD=-60V, VG=-10V, RG=25Ω, L=2mH, IAS=-20A. C. Pd is based on max. junction temperature, using junction-case and junction-ambient thermal resistance. D. The value of RθJA is measured with the device mounted on the 40mm*40mm*1.1mm FR-4 PCB board with 1 in2 pad of 2oz. Copper, in the still air environment with TA =25℃.The maximum allowed junction temperature of 150℃. The value in any given application depends on the user's specific board design. 2/7 S-E193 Rev.1.4,20-Dec-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJG80GP06B ■Typical Electrical and Thermal Characteristics Diagrams 400 Tj= 25℃ 300 VGS= -10V -9V -8V -7V VDS= -5V 25℃ 300 -ID-Drain Current (A) -ID-Drain Current (A) 400 -6V 200 -5V 100 200 150℃ 100 -4V 0 0 0 1 2 3 4 2 5 4 Figure 1. Output Characteristics 10 VDS= -30V ID= -20A Tj= 25℃ -VGS-Gate to Source Voltage (V) Ciss C-Capacitance (pF) 1000 Coss Crss 10 1 8 6 4 2 0 0 20 40 60 0 20 -VDS-Drain to Source Voltage (V) 40 2.5 RDS(on)-Drain to Source Resistance Normalized RDS(on)-Drain to Source resistance (mΩ) 80 100 125 175 Figure 4. Gate Charge 100 80 60 40 20 ID= -40A Tj= 25℃ 3 60 Qg-Total Gate Charge (nC) Figure 3. Capacitance Characteristics 0 8 Figure 2. Transfer Characteristics 10000 100 6 -Vgs-Gate to Source Voltage (V) -VDS-Drain to Source Voltage (V) Vgs= -10V 2 1.5 1 0.5 5 7 -75 9 -25 25 75 Tj-Junction Temperature (℃) -VGS-Gate to Source Voltage (V) Figure 5. On-Resistance vs Gate to Source Voltage Figure 6. Normalized On-Resistance 3/7 S-E193 Rev.1.4,20-Dec-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com 100 8 Tj= 25℃ 7 -Is-Reverse Drain Current (A) RDS(on) -Drain to Source resistance (mΩ) YJG80GP06B VGS= -6V 6 VGS= -10V 25℃ 150℃ 10 1 5 0 20 40 60 0.4 80 0.5 Figure 7. RDS(on) VS Drain Current 0.7 0.8 0.9 1 Figure 8. Forward characteristics of reverse diode 1.4 1.1 ID=-250uA ID=-250uA BVDSS-MAX Drain to Source Voltage Normalized 0.6 -Vsd- Source to Drain Voltage (V) -ID-Drain Current (A) VGS(th)-Threshold Voltage Normalized 1.2 1.05 1 0.95 0.9 -75 -25 25 75 125 1 0.8 0.6 0.4 0.2 175 -75 -25 25 75 125 175 Tj-Junction Temperature (℃) Tj-Junction Temperature (℃) Figure 9. Normalized breakdown voltage Figure 10. Normalized Threshold voltage 150 100 Ptot-Power Dissipation (W) -ID-Drain Current (A) 80 60 40 20 100 50 0 0 -50 0 50 100 -50 150 0 50 100 150 Tc-Case Temperature (℃) Tc-Case Temperature (℃) Figure 11. Current dissipation Figure 12. Power dissipation 4/7 S-E193 Rev.1.4,20-Dec-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJG80GP06B 1000 -ID-Drain-Source Current (A) Zth(J-C)-Thermal Resistance (℃/W) 10 1 D=0.5 D=0.3 0.1 D=0.1 D=0.05 D=0.02 D=0.01 0.01 0.001 0.000001 Operation in this area is limited by RDS(ON) 100uS 300uS 10 1mS TJ(max)=150℃ Single Pulse 0.00001 10uS 100 10mS DC TC=25℃ 0.0001 0.001 0.01 0.1 1 1 Single Pulse 0.1 Square Wave Pulse Durtion(S) 1 10 100 1000 -VDS-Drain to Source Voltage (V) Figure 13. Maximum Transient Thermal Impedance Figure 14. Safe Operation Area 5/7 S-E193 Rev.1.4,20-Dec-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJG80GP06B L2 ■ PDFN5060-8L-B-1.1MM Package information D D2 D1 A E3 L1x4 E4 E E2 E1 A1 e Bottom View 背面视图 Top View 正面视图 SYMBOL 0.50 A2 bx8 D E A A1 4.52 0.76 MIN 5.15 5.95 1.00 Side View 侧面视图 MILLIMETER NOM 5.35 6.15 1.10 0.254 BSC 0.10 3.97 6.25 1.34 A2 D1 E1 3.92 3.52 4.12 3.72 4.32 3.92 D2 5.00 5.20 5.40 E2 5.66 5.86 6.06 E3 0.254 REF 0.21 REF E4 L1 0.56 L2 1.27 e 0.76 1.02 b 0.51 Suggested Solder Pad Layout Top View MAX 5.55 6.35 1.20 0.66 0.76 0.50 BSC 0.31 0.41 0.51 1.27 BSC Note: 1.Controlling dimension:in millimeters. 2.General tolerance:±0.10mm. 3.The pad layout is for reference purposes only. 6/7 S-E193 Rev.1.4,20-Dec-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJG80GP06B Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 7/7 S-E193 Rev.1.4,20-Dec-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com