YJL03N06AQ

RoHS YJL03N06AQ COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) 60V 3.0A ＜100mohm ＜120mohm General Description ● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) ● Part no. with suffix “Q” means AEC-Q101 qualified Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V 3 TA=25℃ Drain Current A ID 2.4 TA=70℃ Pulsed Drain Current A IDM TA=25℃ Total Power Dissipation 12 A 1.2 W 0.8 W PD TA=70℃ Thermal Resistance Junction-to-Ambient B RθJA 104 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJL03N06AQ F2 S10. 3000 30000 120000 7“ reel 1/7 S-S3541 Rev.1.1,12-Apr-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJL03N06AQ ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 60 Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V 1 IGSS1 VGS=±20V, VDS=0V ±100 IGSS2 VGS=±10V, VDS=0V ±50 Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA Static Drain-Source On-Resistance RDS(ON) Units Static Parameter V nA Gate-Body Leakage Current Diode Forward Voltage μA VSD 0.9 1.3 2.0 VGS=10V, ID=3A 86 100 VGS=4.5V, ID=2A 92 120 V mΩ IS=3A,VGS=0V 1.2 V Dynamic Parameters 409 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 41 Total Gate Charge Qg 10.27 Gate-Source Charge Qgs Gate-Drain Charge Qgd Reverse Recovery Chrage Qrr VDS=10V,VGS=0V,f=1MHZ 50 pF Switching Parameters VGS=10V,VDS=30V,ID=3A 1.65 nC 2.11 6.99 IF=3A, di/dt=100A/us Reverse Recovery Time trr 32.6 Turn-on Delay Time tD(on) 3.6 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off fall Time VGS=10V, VDS=30V, RL=20Ω RGEN=3Ω tf 17.6 ns 13 23 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. 2/7 S-S3541 Rev.1.1,12-Apr-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJL03N06AQ ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure 3: On-Resistance vs. Drain Current and Gate Voltage Figure 4: On-Resistance vs. Junction Temperature Figure5. Capacitance Characteristics Figure6. Gate Charge 3/7 S-S3541 Rev.1.1,12-Apr-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJL03N06AQ Figure7. Safe Operation Area Figure8. Maximum Continuous Drain Current vs Ambient Temperature Figure9. Normalized Maximum Transient Thermal Impedance 4/7 S-S3541 Rev.1.1,12-Apr-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJL03N06AQ Resistive Switching Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Gate Charge Test Circuit & Waveform Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 5/7 S-S3541 Rev.1.1,12-Apr-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJL03N06AQ ■ SOT-23 Package information DIM INCHES MM MIN MAX MIN MAX A 0.035 0.045 0.90 1.15 A1 0.000 0.004 0.00 0.10 A2 0.035 0.041 0.90 1.05 b 0.012 0.020 0.30 0.50 c 0.004 0.008 0.10 0.20 D 0.110 0.118 2.80 3.00 E 0.047 0.055 1.20 1.40 E1 0.089 0.100 2.25 2.55 e e1 L 0.370TYP 0.071 0.079 0.220REF NOTE 0.95TYP 1.80 2.00 0.55REF L1 0.012 0.020 0.30 0.50 θ 0° 8° 0° 8° ■ SOT-23 Suggested Pad Layout 6/7 S-S3541 Rev.1.1,12-Apr-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJL03N06AQ Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with automotive electronics，are not designed for use in medical, lifesaving, lifesustaining,or military,Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting fro m such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 7/7 S-S3541 Rev.1.1,12-Apr-22 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com