0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
YJL1012E

YJL1012E

  • 厂商:

    YANGJIE(扬杰科技)

  • 封装:

    SOT-523-3

  • 描述:

    n通道增强模场效应晶体管

  • 数据手册
  • 价格&库存
YJL1012E 数据手册
RoHS YJL1012E COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 20V ● ID 0.77A ● RDS(ON)( at VGS= 4.5V) < 260mohm ● RDS(ON)( at VGS= 2.5V) < 360mohm ● RDS(ON)( at VGS= 1.8V) < 700mohm ● ESD Protected >4.0KV(HBM) General Description ● Trench Power LV MOSFET technology ● High Density Cell Design for Low RDS(ON) ● High Speed switching Applications ● Battery protection ● Load switch ● Power management ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 20 V Gate-source Voltage VGS ±12 V 0.77 TA=25℃ Drain Current ID A 0.62 TA=70℃ Pulsed Drain Current A IDM 3.0 A Total Power Dissipation @ TA=25℃ Steady State PD 0.29 W Thermal Resistance Junction-to-Ambient B RθJA 430 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55~+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJL1012E F2 C. 3000 30000 120000 7“ reel 1/7 S-E658 Rev.1.0 29-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJL1012E ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Drain-Source Breakdown Voltage BVDSS VGS=0V, ID= 250μA 20 Zero Gate Voltage Drain Current IDSS VDS= 20V,VGS=0V Typ Max Units Static Parameter Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage V 1 μA VGS=±10V, VDS=0V ±2.5 ±10 μA VGS=±8V, VDS=0V ±500 ±2000 nA 0.75 1.1 V VGS= 4.5V, ID= 0.50A 160 260 VGS= 2.5V, ID= 0.40A 211 360 VGS= 1.8V, ID= 0.20A 300 700 IGSS VGS(th) RDS(ON) VSD VDS= VGS, ID= 250μA 0.35 IS= 0.77A,VGS=0V 1.2 mΩ V Dynamic Parameters Input Capacitance Ciss 56 Output Capacitance Coss Reverse Transfer Capacitance Crss 2.5 Total Gate Charge Qg 1 Gate-Source Charge Qgs Gate-Drain Charge Qgd Reverse Recovery Chrage Qrr VDS=9V,VGS=0V,f=1MHZ 20 pF Switching Parameters VGS= 4.5V,VDS= 10V,ID= 0.5A 0.3 nC 0.2 0.4 IF=4A, di/dt=100A/us Reverse Recovery Time trr 14 Turn-on Delay Time tD(on) 2 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off fall Time VGS=4.5V, VDS=9V, ID=1A RGEN=2.5Ω tf 19 ns 10 23 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. RθJA is the sum of the junction-to-lead and lead-to-ambient thermal resistance, where the lead thermal reference is defined as the solder mounting surface of the drain pins. RθJL is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. 2/7 S-E658 Rev.1.0 29-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJL1012E ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure 3: On-Resistance vs. Drain Current and Gate Voltage Figure 4: On-Resistance vs. Junction Temperature Figure6. Gate Charge Figure5. Capacitance Characteristics 3/7 S-E658 Rev.1.0 29-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJL1012E Figure8. Maximum Continuous Drain Current vs Ambient Temperature Figure7. Safe Operation Area Figure9. Normalized Maximum Transient Thermal Impedance 4/7 S-E658 Rev.1.0 29-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJL1012E Resistive Switching Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Gate Charge Test Circuit & Waveform Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 5/7 S-E658 Rev.1.0 29-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJL1012E ■ SOT-523 Package Information 6/7 S-E658 Rev.1.0 29-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJL1012E Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 7/7 S-E658 Rev.1.0 29-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com
YJL1012E 价格&库存

很抱歉,暂时无法提供与“YJL1012E”相匹配的价格&库存,您可以联系我们找货

免费人工找货
YJL1012E
    •  国内价格
    • 1+0.18110

    库存:0

    YJL1012E
    •  国内价格
    • 1+0.14700
    • 30+0.14175
    • 100+0.13650
    • 500+0.12600
    • 1000+0.12075
    • 2000+0.11760

    库存:0