RoHS
YJL3404A
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
● ID
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
30V
5.6A
<29 mohm
<40 mohm
General Description
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Applications
● Battery protection
● Load switch
● Power management
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Drain-source Voltage
VDS
30
V
Gate-source Voltage
VGS
±20
V
TA=25℃ @ Steady State
Drain Current
5.6
ID
TA=70℃ @ Steady State
Unit
A
4.5
Pulsed Drain Current A
IDM
30
A
Total Power Dissipation @ TA=25℃
PD
1.2
W
RθJA
104
℃/ W
TJ ,TSTG
-55~+150
℃
Thermal Resistance Junction-to-Ambient @ Steady State B
Junction and Storage Temperature Range
■ Ordering Information (Example)
PREFERED P/N
PACKING
CODE
Marking
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
YJL3404A
F2
R4.
3000
30000
120000
7“ reel
1/6
S-S1897
Rev.2.0,24-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJL3404A
■ Electrical Characteristics (TJ=25℃ unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
BVDSS
VGS= 0V, ID=250μA
30
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
1
μA
IGSS
VGS= ±20V, VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS= VGS, ID=250μA
1.5
2.2
V
21
29
Static Drain-Source On-Resistance
RDS(ON)
Static Parameter
Gate-Body Leakage Current
1
VGS=10V, ID=5.6A
Diode Forward Voltage
VSD
Maximum Body-Diode Continuous Current
V
mΩ
VGS= 4.5V, ID=5.0A
27
40
IS=5.6A,VGS=0V
0.8
1.2
V
5.6
A
IS
Dynamic Parameters
Input Capacitance
Ciss
490
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
68
Total Gate Charge
Qg
5.2
Gate Source Charge
Qgs
Gate Drain Charge
Qgd
1.3
Turn-on Delay Time
tD(on)
4.5
Turn-on Rise Time
tr
VDS=15V,VGS=0V,f=1MHZ
92
pF
Switching Parameters
VGS=10V,VDS=15V,ID=5.6A
0.9
2.5
VGS=4.5V,VDD=15V, ID=1A,
RGEN=2.8Ω
Turn-off Delay Time
Turn-off Fall Time
nC
ns
tD(off)
14.5
tf
3.5
A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.
B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
2/6
S-S1897
Rev.2.0,24-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJL3404A
■ Typical Performance Characteristics
Figure1. Output Characteristics
Figure2. Transfer Characteristics
Figure3. Capacitance Characteristics
Figure4. Gate Charge
Figure5. Drain-Source on Resistance
Figure6. Drain-Source on Resistance
3/6
S-S1897
Rev.2.0,24-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJL3404A
Figure7. Safe Operation Area
Figure8. Switching wave
4/6
S-S1897
Rev.2.0,24-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJL3404A
■ SOT-23 Package information
■ SOT-23 Suggested Pad Layout
5/6
S-S1897
Rev.2.0,24-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJL3404A
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.
6/6
S-S1897
Rev.2.0,24-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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