YJQ20N04A

RoHS YJQ20N04A COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS= 10V) ● RDS(ON)( at VGS= 4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 40 V 20 A ＜14.0 mohm ＜18.5 mohm General Description ● Trench Power LV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● High current load applications ● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 40 V Gate-source Voltage VGS ±20 V 20 TC=25℃ Drain Current ID A 14 TC=100℃ Pulsed Drain Current A IDM 90 A Single Pulse Avalanche Energy B EAS 70 mJ 21 TC=25℃ Total Power Dissipation PD W 2.34 TA=25℃ RθJC 5.9 RθJA 53.4 TJ ,TSTG -55～+150 Thermal Resistance Junction-to-Case ℃/ W Junction and Storage Temperature Range ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJQ20N04A F1 Q20N04 5000 10000 100000 13“ reel 1/7 S-E620 Rev.3.1,14-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ20N04A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 40 Zero Gate Voltage Drain Current IDSS VDS=40V,VGS=0V 1 μA IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.5 2.5 V 11 14 Static Drain-Source On-Resistance RDS(ON) Static Parameter Gate-Body Leakage Current 1.0 VGS= 10V, ID=20A Diode Forward Voltage VSD Maximum Body-Diode Continuous Current V mΩ VGS= 4.5V, ID=10A 14.3 18.5 IS=10A,VGS=0V 0.7 1.2 V 20 A IS Dynamic Parameters Input Capacitance Ciss 917 Output Capacitance Coss Reverse Transfer Capacitance Crss 108 Total Gate Charge Qg 23.6 Gate-Source Charge Qgs VDS=20V,VGS=0V,f=1MHZ 128 pF Switching Parameters VGS=10V,VDS=20V,ID=20A 4.4 nC Gate-Drain Charge Qgd Reverse Recovery Charge Qrr 6.3 0.4 IF=20A, di/dt=100A/us Reverse Recovery Time trr 7 Turn-on Delay Time tD(on) 10 Turn-on Rise Time tr 56 ns VGS=10V,VDD=20V, ID=2A,RGEN=3Ω Turn-off Delay Time Turn-off fall Time tD(off) 27 tf 72 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. 2/7 S-E620 Rev.3.1,14-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ20N04A ■ Typical Performance Characteristics Figure 1. Output Characteristics Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 2. Transfer Characteristics Figure 4. On-Resistance vs. Junction Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge 3/7 S-E620 Rev.3.1,14-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ20N04A Figure 7. Safe Operation Area Figure 8. Maximum Continuous Drain Current vs Case Temperature Figure 9. Normalized Maximum Transient Thermal Impedance 4/7 S-E620 Rev.3.1,14-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ20N04A Resistive Switching Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Gate Charge Test Circuit & Waveform Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 5/7 S-E620 Rev.3.1,14-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ20N04A ■ DFN3.3X3.3 Package information 6/7 S-E620 Rev.3.1,14-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ20N04A Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 7/7 S-E620 Rev.3.1,14-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com