YJQ40G10A-F1-1100HF

RoHS YJQ40G10A COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 100V 40A ＜18.5 mohm ＜22.5 mohm General Description ● Split gate trench MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● Consumer electronic power supply ● Motor control ● Synchronous-rectification ● Isolated DC/DC convertor ● Invertors ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 100 V Gate-source Voltage VGS ±20 V 40 Tc=25℃ Drain Current ID A 25.3 Tc=100℃ Pulsed Drain Current A IDM 160 A Avalanche energy B EAS 81 mJ 43 Tc=25℃ Total Power Dissipation C PD W 17.2 Tc=100℃ Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■Thermal resistance Parameter Symbol Thermal Resistance Junction-to-Ambient D t≤10S Typ Max 20 25 45 55 2.4 2.9 Units RθJA Thermal Resistance Junction-to-Ambient D Steady-State Thermal Resistance Junction-to-Case Steady-State RθJC ℃/W ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJQ40G10A F1 Q40G10A 5000 10000 100000 13“ reel 1/6 S-E412 Rev.3.1,29-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ40G10A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 100 Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V 1 μA IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.8 2.5 V VGS=10V, ID=20A 15 18.5 Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=20A 18 22.5 Static Parameter Gate-Body Leakage Current Diode Forward Voltage VSD Maximum Body-Diode Continuous Current IS Gate resistance RG 1.0 V mΩ IS=20A,VGS=0V f=1MHz, Open drain 1 1.3 V 40 A Ω Dynamic Parameters Input Capacitance Ciss 1051 Output Capacitance Coss Reverse Transfer Capacitance Crss 18 Total Gate Charge Qg 16 Gate-Source Charge Qgs Gate-Drain Charge Qgd Reverse Recovery Chrage Qrr VDS=50V,VGS=0V,f=1MHZ 399 pF Switching Parameters VGS=10V,VDS=50V,ID=25A 5.6 nC 2.4 42 IF=20A, di/dt=100A/us Reverse Recovery Time trr 39.8 Turn-on Delay Time tD(on) 39.2 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off fall Time A. B. C. D. VGS=10V,VDD=50V,IDS=25A RGEN=2.2Ω tf 11 ns 53.2 15.8 Repetitive rating; pulse width limited by max. junction temperature. VDD=50V, RG=25Ω, L=0.5mH. Pd is based on max. junction temperature, using junction-case thermal resistance. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. 2/6 S-E412 Rev.3.1,29-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ40G10A ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. : On-Resistance vs. Gate to Source Voltage Figure6.Normalized On-Resistance 3/6 S-E412 Rev.3.1,29-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ40G10A Figure7. Drain current Figure8.Safe Operation Area Figure9.Normalized Maximum Transient thermal impedance 4/6 S-E412 Rev.3.1,29-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ40G10A ■ DFN3.3x3.3 Package information 5/6 S-E412 Rev.3.1,29-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ40G10A Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 6/6 S-E412 Rev.3.1,29-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com