YJQ4666B

RoHS YJQ4666B COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-4.5V) ● RDS(ON)( at VGS=-2.5V) ● RDS(ON)( at VGS=-1.8V) -20V -7A ＜36.5mohm ＜46.5mohm ＜60.5mohm General Description ● Trench Power LV MOSFET technology ● High density cell design for Low RDS(ON) ● High Speed switching Applications ● Battery protection ● Power management ● Load switch ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Drain-source Voltage VDS -20 V Gate-source Voltage VGS ±10 V TC=25℃ @ Steady State Drain Current Pulsed Drain Current A Total Power Dissipation @ TC=25℃ -7 ID TC=70℃ @ Steady State A -5.6 IDM -28 A PD 2.2 W RθJA 57 ℃/ W TJ ,TSTG -55～+150 ℃ C Thermal Resistance Junction-to-Ambient @ Steady State D Junction and Storage Temperature Range Unit ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJQ4666B F1 ..G66B 3000 30000 120000 7 “ reel 1/7 S-E668 Rev.3.0,16-Nov-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ4666B ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -20 Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V -1 μA IGSS VGS= ±10V, VDS=0V ±100 nA VGS(th) VDS= VGS, ID=-250μA -0.62 -1.0 V VGS= -4.5V, ID=-7A 24.5 36.5 VGS= -2.5V, ID=-5A 33.5 46.5 VGS= -1.8V, ID=-2A 45.5 60.5 IS=-7A,VGS=0V -0.7 -1.2 Static Parameter Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage RDS(ON) VSD -0.4 V mΩ V Dynamic Parameters 852 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 109 Total Gate Charge Qg 40.1 Gate Source Charge Qgs Gate Drain Charge Qgd Reverse Recovery Charge Qrr VDS=-10V,VGS=0V,f=1MHZ 127 pF Switching Parameters VGS=-4.5V,VDS=-9V,ID=-7A 8.4 nC 8.6 7.8 IF= -15A, di/dt=100A/us Reverse Recovery Time trr 18 Turn-on Delay Time tD(on) 8 Turn-on Rise Time tr Turn-off Delay Time tD(off) 75 tf 46 Turn-off Fall Time VGS=-4.5V,VDD=-9V, ID=-1A, RGEN=2.5Ω 19 ns A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. 2/7 S-E668 Rev.3.0,16-Nov-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ4666B ■ Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance vs. Junction Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge 3/7 S-E668 Rev.3.0,16-Nov-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ4666B Figure 8. Maximum Continuous Drain Current vs Case Temperature Figure 7. Safe Operation Area Figure 9. Normalized Maximum Transient Thermal Impedance 4/7 S-E668 Rev.3.0,16-Nov-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ4666B Resistive Switching Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Gate Charge Test Circuit & Waveform Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 5/7 S-E668 Rev.3.0,16-Nov-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ4666B ■ DFN2x2-6L(0.45mm) Package Information 6/7 S-E668 Rev.3.0,16-Nov-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ4666B Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 7/7 S-E668 Rev.3.0,16-Nov-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com