YJQ50P03A

RoHS YJQ50P03A COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-10V) ● RDS(ON)( at VGS=-4.5V) ● 100% ▽VDS Tested -30V -50A ＜6.2mohm ＜11mohm General Description ● Trench Power LV MOSFET technology ● High Power and current handing capability Applications ● High current load applications ● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS -30 V Gate-source Voltage VGS ±25 V -50 TC=25℃ Drain Current ID A -40 TC=70℃ Pulsed Drain Current A IDM -200 A 83 W 5.2 W -55～+150 ℃ TC=25℃ Total Power Dissipation PD TA=25℃ Junction and Storage Temperature Range TJ ,TSTG ■Thermal resistance Parameter Symbol Junction to Ambient @MaximumB t≤10S Typ Max 18 24 36 50 1 1.5 Units RθJA Junction to Ambient @MaximumBC Steady-State Junction to Case @Maximum Steady-State RθJC ℃/W ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJQ50P03A F1 Q50P03A 5000 10000 100000 13“ reel 1/7 S-E654 Rev.3.0,10- Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ50P03A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -30 Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V -1 μA IGSS VGS= ±25V, VDS=0V ±100 nA VGS(th) VDS= VGS, ID=-250μA -1.8 -2.8 V VGS= -10V, ID= -15A 5.0 6.2 VGS= -4.5V, ID= -10A 6.9 11 Static Parameter Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance -1.2 V mΩ RDS(ON) Diode Forward Voltage VSD IS= -15A,VGS=0V -1.2 V Dynamic Parameters 6464 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 477 Total Gate Charge Qg 111.7 Gate-Source Charge Qgs Gate-Drain Charge Qgd Reverse Recovery Chrage Qrr VDS=-15V,VGS=0V,f=1MHZ 779 pF Switching Parameters VGS= -10V,VDS= -15V,ID= -20A 21.1 nC 22.9 8.5 IF=-20A, dI/dt=100A/s Reverse Recovery Time trr 24 Turn-on Delay Time tD(on) 15 Turn-on Rise Time tr 79 ns VGS= -10V,VDD= -15V,RG=3Ω,RL= 0.75Ω Turn-off Delay Time Turn-off fall Time tD(off) 136 tf 80 A: Pulse Test:Pulse Width≤300us,Duty cycle≤2%. B. The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz,Copper,in a still air.environment with TA =25℃,The Value in any given application depends on the user’s specific board design. C. The RθJA is the sum of the thermal impedence from junction to lead RθJC and lead to ambient. 2/7 S-E654 Rev.3.0,10- Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ50P03A ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure 3: On-Resistance vs. Drain Current and Gate Voltage Figure 4: On-Resistance vs. Junction Temperature Figure5. Capacitance Characteristics Figure6. Gate Charge 3/7 S-E654 Rev.3.0,10- Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ50P03A Figure7. Safe Operation Area Figure8. Maximum Continuous Drain Current vs Case Temperature Figure9. Normalized Maximum Transient Thermal Impedance 4/7 S-E654 Rev.3.0,10- Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ50P03A Resistive Switching Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Gate Charge Test Circuit & Waveform Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 5/7 S-E654 Rev.3.0,10- Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ50P03A ■ DFN3.3×3.3 Package information 6/7 S-E654 Rev.3.0,10- Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJQ50P03A Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 7/7 S-E654 Rev.3.0,10- Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com