YJS2308A

RoHS YJS2308A COMPLIANT N-Channel and P-Channel Complementary Power MOSFET Product Summary NMOS ● VDS ● ID ● RDS(ON)( at VGS=4.5V) ● RDS(ON)( at VGS=2.5V) ● RDS(ON)( at VGS=1.8V) PMOS ● VDS ● ID ● RDS(ON)( at VGS=-4.5V) ● RDS(ON)( at VGS=-2.5V) ● RDS(ON)( at VGS=-1.8V) 20V 5.6A ＜25mohm ＜32mohm ＜49mohm -20V -3.7A ＜64mohm ＜80mohm ＜110mohm ● 100% ▽VDS Tested General Description SOT-23-6L ● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching Applications ● Wireless charger ● Load switch ● Power management ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-source Voltage VDS 20 -20 V Gate-source Voltage VGS ±10 ±10 V 5.6 -3.7 TA=25℃ Drain Current ID A TA=70℃ Pulsed Drain Current A IDM TA=25℃ Total Power Dissipation Unit 4.5 -3 19 -15 A 1.3 1.3 W 0.8 0.8 W PD TA=70℃ Thermal Resistance Junction-to-Ambient B RθJA 96 96 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+150 -55～+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJS2308A F2 2308 3000 30000 120000 7“ reel 1 / 10 S-E068 Rev.3.0,27-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS2308A ■ N-MOS Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 20 Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 μA IGSS VGS=±10V, VDS=0V ±100 nA VGS(th) VDS= VGS, ID=250μA 0.62 1.0 V VGS=4.5V, ID=4.5A 19.5 25 VGS=2.5V, ID=3A 25 32 VGS=1.8V, ID=2A 33 49 Static Parameter Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage RDS(ON) VSD 0.5 V IS=5.6A,VGS=0V mΩ 1.2 V Dynamic Parameters Input Capacitance Ciss 418 Output Capacitance Coss Reverse Transfer Capacitance Crss 70 Total Gate Charge Qg 6.05 Gate-Source Charge Qgs VDS=10V,VGS=0V,f=1MHZ 82 pF Switching Parameters VGS=4.5V,VDS=10V,ID=4.5A 1.07 nC Gate-Drain Charge Qgd Reverse Recovery Chrage Qrr 1.95 1.38 IF=4.5A, di/dt=100A/us Reverse Recovery Time trr 17.9 Turn-on Delay Time tD(on) 4.2 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off fall Time VGS=4.5V, VDS=10V, RL=1Ω RGEN=3Ω tf 19.8 ns 22.6 23.2 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. 2 / 10 S-E068 Rev.3.0,27-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS2308A ■ P-MOS Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250μA -20 Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V -1 μA IGSS VGS=±10V, VDS=0V ±100 nA VGS(th) VDS= VGS, ID=-250μA -0.62 -1.0 V VGS=-4.5V, ID=-3.5A 49 64 VGS=-2.5V, ID=-3A 59 80 VGS=-1.8V, ID=-2A 79 110 Static Parameter Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage RDS(ON) VSD -0.4 V IS=-3.7A,VGS=0V mΩ -1.2 V Dynamic Parameters Input Capacitance Ciss 438 Output Capacitance Coss Reverse Transfer Capacitance Crss 62 Total Gate Charge Qg 5.41 Gate-Source Charge Qgs VDS=-10V,VGS=0V,f=1MHZ 76 pF Switching Parameters VGS=-10V,VDS=-15V,ID=-3.4A 1.17 nC Gate-Drain Charge Qgd Reverse Recovery Chrage Qrr 1.24 4 IF=-3.4A, di/dt=100A/us Reverse Recovery Time trr 24.5 Turn-on Delay Time tD(on) 6.4 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off fall Time VGS=-4.5V, VDS=-10V, ID=-1A RGEN=3Ω tf 21.8 ns 37.4 34 C. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. D. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. 3 / 10 S-E068 Rev.3.0,27-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS2308A ■ N-MOS Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure 3: On-Resistance vs. Drain Current and Gate Voltage Figure 4: On-Resistance vs. Junction Temperature Figure5. Capacitance Characteristics Figure6. Gate Charge 4 / 10 S-E068 Rev.3.0,27-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS2308A Figure7. Safe Operation Area Figure8. Maximum Continuous Drain Current vs Ambient Temperature Figure9.Normalized Maximum Transient Thermal Impedance 5 / 10 S-E068 Rev.3.0,27-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS2308A ■ P-MOS Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure 3: On-Resistance vs. Drain Current and Gate Voltage Figure 4: On-Resistance vs. Junction Temperature Figure5. Capacitance Characteristics Figure6. Gate Charge 6 / 10 S-E068 Rev.3.0,27-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS2308A Figure7. Safe Operation Area Figure8. Maximum Continuous Drain Current vs Ambient Temperature Figure9.Normalized Maximum Transient Thermal Impedance 7 / 10 S-E068 Rev.3.0,27-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS2308A Resistive Switching Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Gate Charge Test Circuit & Waveform Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 8 / 10 S-E068 Rev.3.0,27-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS2308A ■ SOT-23-6L Package information 9 / 10 S-E068 Rev.3.0,27-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS2308A Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 10 / 10 S-E068 Rev.3.0,27-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com