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YJS4407A

YJS4407A

  • 厂商:

    YANGJIE(扬杰科技)

  • 封装:

    SOP8_150MIL

  • 描述:

    P沟道 漏源电压(Vdss):30V 连续漏极电流(Id):12A 功率(Pd):3.2W

  • 数据手册
  • 价格&库存
YJS4407A 数据手册
RoHS YJS4407A COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-20V) ● RDS(ON)( at VGS=-10V) ● RDS(ON)( at VGS=-4.5V) -30V -12A <10.5mohm <12.5mohm < 20.8mohm General Description ● Trench Power LV MOSFET technology ● High density cell design for Low RDS(ON) ● High Speed switching Applications ● Battery protection ● Power management ● Load switch ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Drain-source Voltage VDS -30 V Gate-source Voltage VGS ±25 V TA=25℃ @ Steady State Drain Current -12 ID TA=70℃ @ Steady State Unit A -10 Pulsed Drain Current A IDM -55 A Single Pulse Avalanche Energy B EAS 105 mJ PD 3.2 W RθJA 39 ℃/ W TJ ,TSTG -55~+150 ℃ Total Power Dissipation @ TA=25℃ C Thermal Resistance Junction-to-Ambient @ Steady State D Junction and Storage Temperature Range ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJS4407A F2 Q4407B. 4000 8000 64000 13“ reel 1/7 S-E648 Rev.3.0,20-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS4407A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -30 Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V,TC=25℃ -1 μA IGSS VGS= ±25V, VDS=0V ±100 nA VGS(th) VDS= VGS, ID=-250μA -1.8 -2.8 V VGS= -20V, ID=-12A 9.0 10.5 VGS= -10V, ID=-12A 9.3 12.5 VGS= -6.0V, ID=-10A 12.3 16.5 VGS= -4.5V, ID=-10A 13.8 20.8 IS=-12A,VGS=0V -0.8 -1.2 Static Parameter Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage -1.2 V mΩ RDS(ON) VSD V Dynamic Parameters Input Capacitance Ciss 2152 Output Capacitance Coss Reverse Transfer Capacitance Crss 242 Total Gate Charge Qg 40.1 Gate Source Charge Qgs Gate Drain Charge Qgd Reverse Recovery Charge Qrr VDS=-15V,VGS=0V,f=1MHZ 308 pF Switching Parameters VGS= -10V,VDS= -15V,ID= -12A 8.4 nC 8.6 7.8 IF= -12A, di/dt= 100A/us Reverse Recovery Time trr 18 Turn-on Delay Time tD(on) 8 Turn-on Rise Time tr Turn-off Delay Time tD(off) 75 tf 46 Turn-off Fall Time VGS= -10V,VDD= -15V, ID= -1A, RGEN= 2.5Ω 19 ns A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. RθJA is the sum of the junction-to-lead and lead-to-ambient thermal resistance, where the lead thermal reference is defined as the solder mounting surface of the drain pins. RθJL is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. 2/7 S-E648 Rev.3.0,20-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS4407A ■ Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance vs. Junction Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge 3/7 S-E648 Rev.3.0,20-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS4407A Figure 7. Safe Operation Area Figure 8. Maximum Continuous Drain Current vs Ambient Temperature Figure 9. Normalized Maximum Transient Thermal Impedance 4/7 S-E648 Rev.3.0,20-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS4407A Resistive Switching Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Gate Charge Test Circuit & Waveform Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 5/7 S-E648 Rev.3.0,20-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS4407A ■ SOP-8 Package information 6/7 S-E648 Rev.3.0,20-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS4407A Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 7/7 S-E648 Rev.3.0,20-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com
YJS4407A 价格&库存

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YJS4407A
  •  国内价格
  • 1+0.74846
  • 100+0.70033
  • 300+0.65220
  • 500+0.60407
  • 2000+0.58000
  • 5000+0.56556

库存:0

YJS4407A
    •  国内价格
    • 1+0.81890

    库存:0