YJS4435A

RoHS YJS4435A COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-10V) ● RDS(ON)( at VGS=-4.5V) -30V -10A ＜20.8mohm ＜27.8mohm General Description ● Trench Power LV MOSFET technology ● High density cell design for Low RDS(ON) ● High Speed switching Applications ● Battery protection ● Load switch ● Power management ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Drain-source Voltage VDS -30 V Gate-source Voltage VGS ±20 V TA=25℃ @ Steady State Drain Current -10 ID TA=70℃ @ Steady State Unit A -8 Pulsed Drain Current A IDM -50 A Total Power Dissipation @ TA=25℃ PD 3.0 W RθJA 42 ℃/ W TJ ,TSTG -55～+150 ℃ Thermal Resistance Junction-to-Ambient @ Steady State B Junction and Storage Temperature Range ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJS4435A F2 Q4435A 4000 8000 64000 13“ reel 1/7 S-E646 Rev.3.0,19-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS4435A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -30 Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V,TC=25℃ -1 μA IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250μA -1.5 -2.5 V 15.3 20.8 Static Drain-Source On-Resistance RDS(ON) Static Parameter Gate-Body Leakage Current -1.0 VGS= -10V, ID=-10A Diode Forward Voltage VSD Maximum Body-Diode Continuous Current V mΩ VGS= -4.5V, ID=-5.0A 20.8 27.8 IS=-10A,VGS=0V -0.8 -1.2 V -10 A IS Dynamic Parameters Input Capacitance Ciss 1500 Output Capacitance Coss Reverse Transfer Capacitance Crss 146 Total Gate Charge Qg 28.7 Gate Source Charge Qgs VDS=-15V,VGS=0V,f=1MHZ 178 pF Switching Parameters VGS=-10V,VDS=-15V,ID=-6.0A 5.5 nC Gate Drain Charge Qgd Reverse Recovery Charge Qrr 5.4 6.0 IF= -9A, di/dt=500A/us Reverse Recovery Time trr 14 Turn-on Delay Time tD(on) 10 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off Fall Time VGS=-10V,VDS=-15V, ID=-6.0A, RGEN=2.5Ω tf 44 ns 54 59 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. RθJA is the sum of the junction-to-lead and lead-to-ambient thermal resistance, where the lead thermal reference is defined as the solder mounting surface of the drain pins. RθJL is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. 2/7 S-E646 Rev.3.0,19-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS4435A ■ Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance vs. Junction Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge 3/7 S-E646 Rev.3.0,19-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS4435A Figure 8. Maximum Continuous Drain Current vs Ambient Temperature Figure 7. Safe Operation Area Figure 9. Normalized Maximum Transient Thermal Impedance 4/7 S-E646 Rev.3.0,19-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS4435A Resistive Switching Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Gate Charge Test Circuit & Waveform Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 5/7 S-E646 Rev.3.0,19-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS4435A ■ SOP-8 Package information 6/7 S-E646 Rev.3.0,19-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJS4435A Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 7/7 S-E646 Rev.3.0,19-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com