YJSD12N03A

RoHS YJSD12N03A COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) 30V 12A ＜12 mohm ＜15 mohm General Description ● Trench Power LV MOSFET technology ● High density cell design for low RDS(ON) ● High Speed switching Applications ● Battery protection ● Load switch ● Power management ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 30 V Gate-source Voltage VGS ±20 V TA=25℃ @ Steady State Drain Current 12 ID TA=70℃ @ Steady State Unit A 9.6 Pulsed Drain Current A IDM 50 A Total Power Dissipation @ TA=25℃ PD 2.5 W RθJA 50 ℃/ W TJ ,TSTG -55～+150 ℃ Thermal Resistance Junction-to-Ambient @ Steady State B Junction and Storage Temperature Range ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJSD12N03A F2 Q12N03.. 4000 8000 64000 13“ reel 1/7 S-E606 Rev.3.1,14-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJSD12N03A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 30 Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 μA IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.5 2.5 V 7 12 Static Drain-Source On-Resistance RDS(ON) Static Parameter Gate-Body Leakage Current 1 VGS=10V, ID=8.0A Diode Forward Voltage VSD Maximum Body-Diode Continuous Current V mΩ VGS= 4.5V, ID=6.0A 11 15 IS=12A,VGS=0V 0.85 1.2 V 12 A IS Dynamic Parameters Input Capacitance Ciss 1015 Output Capacitance Coss Reverse Transfer Capacitance Crss 164 Total Gate Charge Qg 23.6 Gate Source Charge Qgs VDS=15V,VGS=0V,f=1MHZ 201 pF Switching Parameters VGS=10V,VDS=20V,ID=20A 3.9 nC Gate Drain Charge Qgd Reverse Recovery Chrage Qrr 7.0 0.2 IF=15A, di/dt=100A/us Reverse Recovery Time trr 5 Turn-on Delay Time tD(on) 7 Turn-on Rise Time tr 20 ns VGS=10V,VDD=20V, ID=2A, RGEN=3Ω Turn-off Delay Time Turn-off Fall Time tD(off) 24 tf 24 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. RθJA is the sum of the junction-to-lead and lead-to-ambient thermal resistance, where the lead thermal reference is defined as the solder mounting surface of the drain pins. RθJL is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. 2/7 S-E606 Rev.3.1,14-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJSD12N03A ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure 3: On-Resistance vs. Drain Current and Gate Voltage Figure 4: On-Resistance vs. Junction Temperature Figure5. Capacitance Characteristics Figure6. Gate Charge 3/7 S-E606 Rev.3.1,14-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJSD12N03A Figure8. Maximum Continuous Drain Current vs Ambient Temperature Figure7. Safe Operation Area Figure9.Normalized Maximum Transient Thermal Impedance 4/7 S-E606 Rev.3.1,14-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJSD12N03A Resistive Switching Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Gate Charge Test Circuit & Waveform Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 5/7 S-E606 Rev.3.1,14-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJSD12N03A ■ SOP-8 Package information 6/7 S-E606 Rev.3.1,14-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJSD12N03A Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 7/7 S-E606 Rev.3.1,14-Oct-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com