MAL5104CC

厂商：
ZARLINK
封装：
描述：
MAL5104CC - RADIATION HARD 4096 x 1 BIT STATIC RAM - Zarlink Semiconductor Inc

数据手册：

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MAL5104CC 数据手册

Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ APRIL 1995 MA5104 DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The device has separate input and output terminals controlled by Chip Select and Write Enable. The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when Chip Select is in the HIGH state. Operation Mode Read Write Standby CS L L H WE H L X I/O D OUT D IN High Z ISB2 Power ISB1 FEATURES s 3µm CMOS-SOS Technology s Latch-up Free s Fast Access Time 90ns Typical s Total Dose 106 Rad(Si) s Transient Upset >1010 Rad(Si)/sec s SEU 1x1012 Rad(Si)/sec >1x1015 n/cm2 3.4x10-9 Errors/bit day Not possible * Other total dose radiation levels available on request ** Worst case galactic cosmic ray upset - interplanetary/high altitude orbit Figure 16: Radiation Hardness Parameters SINGLE EVENT UPSET CHARACTERISTICS UPSET BIT CROSS-SECTION (cm2/bit) Ion LET (MeV.cm2/mg) Figure 17: Typical Per-Bit Upset Cross-Section vs Ion LET 10 MA5104 ORDERING INFORMATION Unique Circuit Designator Radiation Tolerance S L C R Radiation Hard Processing 30 kRads (Si) Guaranteed 50 kRads (Si) Guaranteed 100 kRads (Si) Guaranteed MAx5104xxxxx QA/QCI Process (See Section 9 Part 4) Test Process (See Section 9 Part 3) Package Type C F Ceramic DIL (Solder Seal) Flatpack (Solder Seal) Assembly Process (See Section 9 Part 2) Reliability Level L C D E B S Rel 0 Rel 1 Rel 2 Rel 3/4/5/STACK Class B Class S For details of reliability, QA/QC, test and assembly options, see ‘Manufacturing Capability and Quality Assurance Standards’ Section 9. HEADQUARTERS OPERATIONS CUSTOMER SERVICE CENTRES GEC PLESSEY SEMICONDUCTORS Cheney Manor, Swindon, Wiltshire, SN2 2QW, United Kingdom. Tel: (01793) 518000 Fax: (01793) 518411 GEC PLESSEY SEMICONDUCTORS P.O. Box 660017, 1500 Green Hills Road, Scotts Valley, California 95067-0017, United States of America. Tel: (408) 438 2900 Fax: (408) 438 5576 • FRANCE & BENELUX Les Ulis Cedex Tel: (1) 64 46 23 45 Fax: (1) 64 46 06 07 • GERMANY Munich Tel: (089) 3609 06-0 Fax: (089) 3609 06-55 • ITALY Milan Tel: (02) 66040867 Fax: (02) 66040993 • JAPAN Tokyo Tel: (03) 5276-5501 Fax: (03) 5276-5510 • NORTH AMERICA Scotts Valley, USA Tel: (408) 438 2900 Fax: (408) 438 7023 • SOUTH EAST ASIA Singapore Tel: (65) 3827708 Fax: (65) 3828872 • SWEDEN Stockholm Tel: 46 8 702 97 70 Fax: 46 8 640 47 36 • TAIWAN, ROC Taipei Tel: 886 2 5461260 Fax: 886 2 7190260 • UK, EIRE, DENMARK, FINLAND & NORWAY Swindon, UK Tel: (01793) 518527/518566 Fax: (01793) 518582 These are supported by Agents and Distributors in major countries world-wide. © GEC Plessey Semiconductors 1995 Publication No. DS3580-3.2 April 1995 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior knowledge the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. 11

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MAL5104CC

1. 物料型号： - 型号名称：MA5104 - 制造商：GEC PLESSEY

2. 器件简介： - MA5104是一款4k位静态RAM，配置为4096 x 1位，采用CMOS-SOS高性能、抗辐射、3微米技术制造。 - 设备具有独立的输入和输出终端，由芯片选择和写使能控制。 - 设计使用6晶体管单元，具有全静态操作，无需时钟或定时脉冲。

3. 引脚分配： - 引脚1：A0，引脚2：A1，引脚3：A2，引脚4：A3，引脚5：A4，引脚6：A5，引脚7：DOUT，引脚8：WEB，引脚9：VSS，引脚10：CSB，引脚11：DIN，引脚12：A11，引脚13：A10，引脚14：A9，引脚15：A8，引脚16：A7，引脚17：A6，引脚18：VDD。

4. 参数特性： - 供电电压（Vcc）：-0.5V至7V - 输入电压（V1）：-0.3V至Vpp+0.3V - 工作温度（TA）：-55°C至125°C - 存储温度（Ts）：-65°C至150°C

5. 功能详解： - 3微米CMOS-SOS技术 - 抗锁定 - 快速访问时间90ns（典型值） - 总剂量106 Rad(Si) - 瞬态干扰>1010 Rad(Si)/sec - 单事件翻转（SEU）<10^-10错误/位·天 - 单5V供电 - 三态输出 - 低待机电流10μA（典型值）-55°C至+125°C工作 - 所有输入和输出完全兼容TTL或CMOS

6. 应用信息： - 适用于需要抗辐射性能的应用，如航天、军事等领域。

7. 封装信息： - 18引脚陶瓷DIL（焊封）- 封装样式C - 24引脚陶瓷平封（焊封）- 封装样式F

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