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SL2150LH2R

SL2150LH2R

  • 厂商:

    ZARLINK

  • 封装:

  • 描述:

    SL2150LH2R - Cable Tuner Front End LNA with AGC - Zarlink Semiconductor Inc

  • 数据手册
  • 价格&库存
SL2150LH2R 数据手册
SL2150D Cable Tuner Front End LNA with AGC Data Sheet Features • • • • • Single chip dual output LNA Wide dynamic range on both channels Independent AGC facility incorporated into all channel paths Independent disable facility incorporated into all channel paths Full ESD protection. (Normal ESD handling procedures should be observed) Ordering Information SL2150D/KG/LH1S 28 Pin QFN SL2150D/KG/LH2R 28 Pin QFN* SL2150D/KG/LH2T 28 Pin QFN* *Pb Free Matte Tin Tubes Trays Tape & Reel September 2005 -20° C to +85 ° C Description The SL2150D is a wide dynamic range front end for tuner applications. The device offers two buffered outputs from a single input, where both paths contain an independently controllable AGC and disable facility. Applications • • • Multi-tuner cable set top box and cable modem applications Data communications systems Terrestrial TV tuner loop though AGC1 AGC2 AGC Control RFINPUT RFINPUTB RFOUT1 RFOUT1B Power Splitter RFOUT2 RFOUT2B AGC Control Power Down DIS1 DIS2 Figure 1 - SL2150D Block Diagram 1 Zarlink Semiconductor Inc. Zarlink, ZL and the Zarlink Semiconductor logo are trademarks of Zarlink Semiconductor Inc. Copyright 2002-2005, Zarlink Semiconductor Inc. All Rights Reserved. SL2150D NC# NC# NC# Vcc Vcc Vcc Vcc Data Sheet Vee Vee RFOUT1 RFOUT1B Vcc Vcc Vcc VEE (PACKAGE PADDLE) 1 Vcc Vcc DIS1 RF INPUT RF INPUT DIS2 Vee SL2150D Vee Vee RFOUT2 RFOUT2B NC# AGC2 AGC1 LH28 # Pins marked NC should be connected to Vee Figure 2 - Pin Allocation 1.0 Quick Reference Data NB all data applies with differential termination and single ended source both of 75 Ω. Characteristics RF input operating range Gain with external load as in Figure 11 maximum minimum Input NF, both paths enabled at maximum gain CTB, both paths enabled, all gain settings * CSO, both paths enabled, all gain settings * CXM, both paths enabled, all gain settings * Input impedance Input VSWR Output impedance differential, all loops (requires external load for example as in Figure 11) Input to output isolation (both outputs) Output to output isolation Table 1 - Reference Data *132 channel matrix at +15 dBmV per channel, 75 Ω source impedance Units 50-860 11 -25 6.4 -66 -64 -60 75 8 440 30 25 MHz dB dB dB dBc dBc dBc Ω dB Ω dB dB 2 Zarlink Semiconductor Inc. SL2150D 2.0 Functional Description Data Sheet The SL2150D is a broadband wide dynamic range dual output tuner front end LNA with AGC. It also has application is any system where a wide dynamic range broadband power splitter is required. The pin assignment is contained in Figure 2 and the block diagram in Figure 1.The port internal peripheral circuits are contained in Figure 14. In normal application the RF input is interfaced to the device input. The input preamplifier is designed for low noise figure, within the operating region of 50 to 860 MHz and for high intermodulation distortion intercept so offering good signal to noise plus composite distortion spurious performance when loaded with a multi carrier system. The preamplifier also provides an impedance match to a 75 Ω source; the typical impedance is shown in Figure 4. The input NF is shown in Figure 6. The output of the preamplifier is then power split to two independently controlled AGC stages. Each AGC stage provides for a minimum of 30 dB of gain control across the input frequency range. The typical AGC characteristic and NF versus gain setting are contained in Figure 5 and Figure 7 respectively. Finally each of the AGC stages drive an output buffer of differential output impedance of 440 Ω, which provides a nominal 11 dB of gain when terminated into a differential 75 Ω load, as in Figure 11. Each channel AGC and output buffer can be independently powered down. In application it is important to avoid saturation of the output stage, therefore it is recommended that the output standing current be sunk to Vcc through an inductor. A resistive pull up can also be used as shown in Figure 13 "Example Application Driving 100 W Load with Resistive Pull Up", however the resistor values should not exceed 20 ohm single ended. If an inductive current sink is used the maximum available gain from the device is circa 26 dB. This gain can be reduced by application of an external load between the differential output ports. The gain can be approximately calculated from the following formula: - GAIN = 20*log ((Parallel combination of 440 ohm and external load between ports)/22 ohm)+2 dB For example when driving a 100 ohm load as in Figure 12, the gain equals - GAIN = 20 *log ((440 *100)/(440+100)/22)+2 dB =12 dB. 3 Zarlink Semiconductor Inc. SL2150D 3 Data Sheet 1nF RF INPUT SL2150D RFIN F TYPE 5.1nH MABAES0029 1:1 1nF 4 RF INPUTB Figure 3 - Input Network CH1 S11 1 U FS 4_: 133.23 Ω 16 Nov 2001 10:10:47 55.758 Ω 10.44 nH 850.000 000 MHz PRm Cor Avg 16 Smo Z0 75 1_: 169.02 -44.117 50 MHz Ω Ω Ω Ω Ω Ω Ω 2_: 49.916 -57.436 250 MHz 3_: 31.238 -5.5576 500 MHz 4 3 1 2 START 50.000 000 MHz STOP 850.000 000 MHz Figure 4 - Typical Single-end Input Impedance 4 Zarlink Semiconductor Inc. SL2150D Typical AGC vs Control Voltage 15 Data Sheet 5 -5 -15 Gain (dB) -25 -35 -45 -55 -65 0.5 0.7 0.9 1.1 1.3 1.5 AGC Voltage (V) 1.7 1.9 2.1 2.3 2.5 Figure 5 - Typical AGC Characteristic Typical Noise Figure vs Frequency (Vagc = 3 V, Maximum Gain) 9 8.5 8 7.5 7 NF(dB) 6.5 6 5.5 5 4.5 4 50 150 250 350 450 Frequency (MHz) 550 650 750 850 Figure 6 - Input Noise Figure at 25°C 5 Zarlink Semiconductor Inc. SL2150D Typical Variation in Noise Figure vs. Gain Setting 20 Data Sheet 18 16 Noise Figure (dB) 14 12 10 8 6 -10 -8 -6 -4 -2 0 2 Gain (dB) 4 6 8 10 12 Figure 7 - Typical Variation in NF versus Gain Setting 6 Zarlink Semiconductor Inc. SL2150D Data Sheet 132 channel matrix, 75 ohm source, all channels at +15 dBmV. Input and output conditions as in Fig. 3 and Fig. 12. -50 -60 CSO,CTB (dBS) CSO (dBC) CTB (dBC) -70 -80 -20 -15 -10 -5 0 Figure 8 - Typical Variation In CSO and CTB Versus Backoff from Maximum Gain 50 Ω Driven output stage C D A Directional coupler B Port 1 Network Analyzer Monitored output stage C D Directional coupler phase relationship A C0 D 180 B 0 0 A B 50 Ω Port 2 Directional coupler Figure 9 - Test Condition for Output Crosstalk 7 Zarlink Semiconductor Inc. SL2150D Data Sheet Driven output stage C D A Directional coupler B 50 Ω Port 1 Monitored input stage Network Analyzer Port 2 Directional coupler phase relationship A C0 D 180 B 0 0 Figure 10 - Test Condition for Output to Input Crosstalk Vcc 100nF 100pF SL2150D MABAES0029 1:1 1nF To 75Ω load FTYPE Figure 11 - Example Application Driving 75 Ω Load 8 Zarlink Semiconductor Inc. SL2150D Vcc Data Sheet 10 µH 10 µH 1 nF SL2150D 100 Ω 1 nF Figure 12 - Example Application Driving 100 Ω Load with Inductive Pull Up Vcc 2x 20 Ω 1 nF SL2150D Note: External resistor values must not exceed 20Ω 100 Ω 1 nF Figure 13 - Example Application Driving 100 Ω Load with Resistive Pull Up 9 Zarlink Semiconductor Inc. SL2150D Data Sheet Vcc INPUT INPUT DECOUPLED 440 Ω 440 Ω Output 2.5 V 1kΩ 270 Ω 3.9 V 2.5 V 1 k Ω 32 mA 32 mA Output Ports RF Input Port 30 k Ω 1.6 V 1.5 kΩ AGC INPUT 1.5 V 1.7 kΩ 20 k Ω AGC INPUT AGC Port DIS Port Figure 14 - Port Peripheral Circuitry 10 Zarlink Semiconductor Inc. SL2150D 3.0 Electrical Characteristics Data Sheet Test conditions (unless otherwise stated). T amb = -20o to 85oC, Vee = 0 V, Vcc = 5 V+-5% These characteristics are guaranteed by either production test or design. They apply within the specified ambient temperature and supply voltage unless otherwise stated. Electrical Characteristics Characteristic Supply current Pin Min. Typ. 190 110 42 50 3, 4 6.8 75 8 6.4 7.2 Max. 220 140 60 860 Units mA mA mA MHz Ω dB dB See Figure 4 See Figure 4 Tamb = 27°C, see Figure 6 All loops at maximum gain See Figure 7 Power gain from 75 Ω single ended source to differential 75 Ω load, with application as in Figure 11. Vagcip = 3.0 V Vagcip = 0.5 V Vagcip = Vee AGC monotonic from Vee to Vcc. Refer to Functional description section for information on calculating maximum gain with other load conditions See note (2) See note (3) See note (2) See note (3) See note (2) All gain settings, with load as in Figure 11 Conditions Both outputs enabled One output enabled Both outputs disabled Input frequency range Input impedance Input return loss Input Noise Figure Variation in NF with gain adjust Gain -1 dB/dB maximum minimum minimum 9.5 11 -50 12.5 -25 dB dB dB CSO CTB CXM Input P1dB +4.5 -66 -62 -65 -62 -60 dBc dBc dBc dBc dBc dBm 11 Zarlink Semiconductor Inc. SL2150D Electrical Characteristics (continued) Characteristic Gain variation within channel Pin Min. Typ. Max. 0.25 Units dB Data Sheet Conditions Channel bandwidth 8 MHz within operating frequency range, all loops, all gain settings Differential Standing current that any external load has to sustain. Vagcip = Vee to Vcc Output impedance Output port DC standing current AGC1, 2 input leakage current DIS1, 2 input Input high voltage Input low voltage Leakage current Crosstalk between outputs 11,12, 24,25 11,12, 24,25 8,9 6, 7 2.8 Vee -200 -200 440 50 Ω mA 200 µA Vcc 0.8 200 -25 V V µA dB Output disabled Output enabled DIS1, 2 = Vee to Vcc All gain settings, measured differential output to differential output, driven ports in phase and monitored ports out of phase, see Figure 9 All gain settings, measured differential output to single ended input, driven ports in phase, see Figure 10 Crosstalk between outputs and RF input -30 dB Note 1: Note 2: Note 3: All power levels are referred to 75 Ω, and 0 dBm = 109 dB µV. Load as in Figure 11and Figure 12, at maximum gain, 132 channel matrix, 75 ohm source with all channels at +15 dBmV, assuming power match. Load as in Figure 11 and Figure 12, all gain settings, 132 channel matrix, 75 ohm source with all channels at +15 dBmV, assuming power match. 12 Zarlink Semiconductor Inc. SL2150D Absolute Maximum Ratings All voltages are referred to Vee at 0V Characteristic Supply voltage RF input voltage All I/O port DC offsets Storage temperature Junction temperature Package thermal resistance, chip to ambient Power consumption at 5.25 V ESD protection 1.5 -0.3 -55 Min. -0.3 Max. 6 8 Vcc+0.3 150 125 35 1155 Units V dBm V oC o Data Sheet Conditions Differential C Power applied Paddle to be soldered to ground plane oC/W mW kV Mil-std 883B method 3015 cat1 13 Zarlink Semiconductor Inc. SL2150D 4.0 Application Diagram Data Sheet Figure 15 - SL2150D Evaluation PCB Schematic 14 Zarlink Semiconductor Inc. Note: Baluns are only required to interface to 75/50 ohm test equipment. For more information about all Zarlink products visit our Web Site at w ww.zarlink.com Information relating to products and services furnished herein by Zarlink Semiconductor Inc. or its subsidiaries (collectively “Zarlink”) is believed to be reliable. However, Zarlink assumes no liability for errors that may appear in this publication, or for liability otherwise arising from the application or use of any such information, product or service or for any infringement of patents or other intellectual property rights owned by third parties which may result from such application or use. Neither the supply of such information or purchase of product or service conveys any license, either express or implied, under patents or other intellectual property rights owned by Zarlink or licensed from third parties by Zarlink, whatsoever. Purchasers of products are also hereby notified that the use of product in certain ways or in combination with Zarlink, or non-Zarlink furnished goods or services may infringe patents or other intellectual property rights owned by Zarlink. This publication is issued to provide information only and (unless agreed by Zarlink in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. The products, their specifications, services and other information appearing in this publication are subject to change by Zarlink without notice. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. Manufacturing does not necessarily include testing of all functions or parameters. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to Zarlink’s conditions of sale which are available on request. Purchase of Zarlink’s I2C components conveys a licence under the Philips I2C Patent rights to use these components in and I2C System, provided that the system conforms to the I2C Standard Specification as defined by Philips. Zarlink, ZL and the Zarlink Semiconductor logo are trademarks of Zarlink Semiconductor Inc. Copyright Zarlink Semiconductor Inc. All Rights Reserved. TECHNICAL DOCUMENTATION - NOT FOR RESALE
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