2N6729

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt 2N6728 2N6729 2N6730 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb= 25°C SYMBOL 2N6728 VCBO VCEO VEBO ICM IC Ptot -60 -60 2N6729 -80 -80 -5 -2 -1 1 E-Line TO92 Compatible 2N6730 -100 -100 UNIT V V V A A W °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL 2N6728 2N6729 2N6730 UNIT CONDITIONS. MIN. MAX MIN. MAX MIN. MAX Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector Base Capacitance V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(on) hFE fT CCB 80 50 20 50 -60 -60 -5 -1 -1 -0.5 -0.35 -1.2 250 500 30 3-9 80 50 20 50 -80 -80 -5 -1 -1 -0.5 -0.35 -1.2 250 500 30 80 50 20 50 -100 -100 -5 V V V µA µA µA µA IC=-0.1mA, IE=0 IC=-1mA, IB=0* IE=-1mA, IC=0 VCB=-60V, IE=0 VCB=-80V, IE=0 VCB=-100V, IE=0 VEB=-5V, IC=0 IC=-250mA,IB=-10mA* IC=-250mA,IB=-25mA* IC=-250mA, VCE=-1V* IC=-50mA, VCE=-1V* IC=-250mA, VCE=-1V* IC=-500mA, VCE=-1V* -1 -1 -0.5 V -0.35 -1.2 250 500 30 V MHz IC=-50mA, VCE=-10V pF VCE=-10V, f=1MHz