BC639

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 – SEPT 93 FEATURES * 1 Amp continuous current * Ptot= 800 mW BC639 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE 80 80 5 1 800 -55 to +150 TO92 UNIT V V V A mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO MIN. 80 80 5 0.1 0.5 1.0 25 40 25 200 TYP. MAX. UNIT V V V µA CONDITIONS. IC=100µA, IE=0 IC=10mA, IB=0* IE=10µA, IC=0 VCB=30V IC=500mA, IB=50mA* IC=500mA,VCE=2V* IC=5mA, VCE=2V* IC=150mA, VCE=2V* IC=500mA, VCE=2V* Collector Cut-Off Current ICBO Collector-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio Transition Frequency VCE(sat) VBE(on) hFE V V 160 MHz fT IC=50mA, VCE=2V f=100MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-18