BC807

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ BC807 E C B COMPLEMENTARY TYPE BC817 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Peak Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB I BM P tot T j :T stg VALUE -50 -45 -5 -1 -500 -100 -200 330 -55 to +150 UNIT V V V A mA mA mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector Cut-Off Current SYMBOL I CBO MIN. TYP. MAX. UNIT CONDITIONS. -0.1 -0.5 -10 -700 -1.2 µA µA mV V V CB=-20V, I E=0 V CB=-20V, I E=0, T amb=150°C V EB=-5V, I C=0 I C=-500mA, I B=-50mA* I C=-500mA, V CE=-1V* Emitter Cut-Off Current I EBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio BC80716 BC80725 BC80740 All bands Transition Frequency Output Capacitance fT C obo V CE(sat) V BE(on) h FE 100 160 250 40 100 8.0 250 400 600 I C=-100mA, V CE=-1V* I C=-100mA, V CE=-1V* I C=-100mA, V CE=-1V* I C=-500mA, V CE=-1V* MHz pF I C=-10mA, V CE=-5V f=35MHz V CB=-10V f=1MHz *Measured under pulsed conditions. Spice parameter data is available upon request for these devices tba