BCW68HR

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 5 - MARCH 2001 PARTMARKING DETAILS – BCW68F – BCW68G – BCW68H – DF DG DH BCW68FR – BCW68GR – BCW68HR – 7T 5T 7N BCW68 C B E COMPLEMENTARY TYPES – BCW66 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current(10ms) Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CES V CEO V EBO I CM IC IB P tot T j:T stg VALUE -60 -45 -5 -1000 -800 -100 330 -55 to +150 SOT23 UNIT V V V mA mA mA mW °C TBA BCW68 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage V (BR)CEO V (BR)CES -45 -60 -5 -20 -10 -20 -0.3 -0.7 V I CEO=-10mA IC=-10 µ A Emitter-Base Breakdown Voltage Collector-Emitter Cut-off Current Emitter-Base Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer BCW68F V (BR)EBO I CES I EBO V CE(sat) V BE(sat) h FE h FE h FE fT C obo C ibo N V nA µA nA V V V I EBO = -10 µ A V CES = -45V VCES =-45V, Tamb=150°C V EBO = -4V IC=-100mA, IB = - 10mA IC= -500mA, IB =-50mA* IC=-500mA,IB=-50mA* IC=-100mA, VCE =-1V* IC=-500mA, VCE =-2V* IC=-100mA, VCE =-1V* IC=-500mA, VCE =-2V* IC=-100mA, VCE =-1V* IC=-500mA, VCE =-2V* -2 100 35 160 60 250 100 100 170 250 BCW68G 250 400 BCW68H 350 630 Transition Frequency MHz I C = -20mA, V CE = -10V f = 100MHz V CB = -10V, f =1MHz V EB = -0.5V, f =1MHz I C= -0.2mA, V CE =- 5V R G = 1K Ω, f =1KH ∆ f=200Hz Output Capacitance Input Capacitance Noise Figure 12 18 80 pF pF dB 2 10 Switching times: Turn-On Time Turn-Off Time t on t off 100 400 ns ns I C=-150mA I B1=- I B2 = -15mA R L=150 Ω S pice parameter data is available upon request for this device *Measured under pulsed conditions. TBA