BCW71

BCW71 BCW72 DIM Millimeters Min Max 3.05 1.40 1.10 0.53 0.15 Inches Min 0.105 0.047 – 0.0145 0.0033 Max 0.120 0.055 0.043 0.021 0.0059 SOT23 NPN PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – BCW71 BCW72 BCW71R BCW72R – K1 – K2 – K4 – K5 BCW71 BCW72 C B E C B E A B C D F G K L N 2.67 1.20 – 0.37 0.085 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Cut-Off Current Base-Emitter Voltage SYMBOL MIN. ICBO VBE 550 120 210 750 850 110 200 Transition Frequency Collector Capacitance Noise Figure fT CTC N 90 150 300 4 10 220 450 MHz pF dB SYMBOL VCBO VCEO VEBO ICM IC PTOT tj:tstg TYP. VALUE 50 45 5 200 100 330 -55 to +150 MAX. UNIT 100 10 700 250 µA SOT23 UNIT V V V mA mA mW °C NOM 1.9 0.01 2.10 0.10 2.50 NOM 0.075 0.0004 0.0825 0.004 0.0985 NOM 0.95 NOM 0.37 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). CONDITIONS. IE=0, VCB=20V IE=0, VCB=20V,Tj=100°C IC=2.0mA, VCE=5V IC=10mA, IB=0.5mA IC=50mA, IB=2.5mA IC=10mA, IB=0.5mA IC=50mA, IB=2.5mA IC =10µ A, VCE =5V IC =2mA, VCE =5V IC =10µ A, VCE =5V IC =2mA, VCE =5V IC =10mA, VCE =5V f =35MHz IE =Ie =0, VCB =10V f =1MHz IC =200µ A, VCE =5V RS =2KΩ , f =1KHz B =200Hz nA mV mV mV mV mV Collector-Emitter Saturation VCE(sat) Voltage Base-Emitter Saturation Voltage Static Forward BCW71 Current Transfer Ratio BCW72 VBE(sat) hFE *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for these devices PAGE NO BCW71 BCW72 DIM Millimeters Min Max 3.05 1.40 1.10 0.53 0.15 Inches Min 0.105 0.047 – 0.0145 0.0033 Max 0.120 0.055 0.043 0.021 0.0059 SOT23 NPN PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – BCW71 BCW72 BCW71R BCW72R – K1 – K2 – K4 – K5 BCW71 BCW72 C B E C B E A B C D F G K L N 2.67 1.20 – 0.37 0.085 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Cut-Off Current Base-Emitter Voltage SYMBOL MIN. ICBO VBE 550 120 210 750 850 110 200 Transition Frequency Collector Capacitance Noise Figure fT CTC N 90 150 300 4 10 220 450 MHz pF dB SYMBOL VCBO VCEO VEBO ICM IC PTOT tj:tstg TYP. VALUE 50 45 5 200 100 330 -55 to +150 MAX. UNIT 100 10 700 250 µA SOT23 UNIT V V V mA mA mW °C NOM 1.9 0.01 2.10 0.10 2.50 NOM 0.075 0.0004 0.0825 0.004 0.0985 NOM 0.95 NOM 0.37 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). CONDITIONS. IE=0, VCB=20V IE=0, VCB=20V,Tj=100°C IC=2.0mA, VCE=5V IC=10mA, IB=0.5mA IC=50mA, IB=2.5mA IC=10mA, IB=0.5mA IC=50mA, IB=2.5mA IC =10µ A, VCE =5V IC =2mA, VCE =5V IC =10µ A, VCE =5V IC =2mA, VCE =5V IC =10mA, VCE =5V f =35MHz IE =Ie =0, VCB =10V f =1MHz IC =200µ A, VCE =5V RS =2KΩ , f =1KHz B =200Hz nA mV mV mV mV mV Collector-Emitter Saturation VCE(sat) Voltage Base-Emitter Saturation Voltage Static Forward BCW71 Current Transfer Ratio BCW72 VBE(sat) hFE *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for these devices PAGE NO