BCX17

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 – MARCH 2001 PARTMARKING DETAILS – BCX17 BCX17R BCX19 – T1 – T4 BCX17 E C B COMPLIMENTARY TYPES - SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage (I C = -10mA) Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current Base Current Peak Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CES V CEO V EBO IC I CM I EM IB I BM P tot T j :T stg VALUE -50 -45 -5 -500 -1000 -1000 -100 -200 330 -55 to +150 UNIT V V V mA mA mA mA mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Cut-Off Current Emitter-Base Cut-Off Current Base-Emitter Voltage Collector-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL I CBO I EBO V BE V CE(sat) h FE 100 70 40 100 8.0 MIN. TYP. MAX. UNIT -100 -200 -10 -1.2 -620 600 nA µA CONDITIONS. I E = 0, V CB = -20V I E = 0, V CB = -20V, T j=150°C I C = 0, V EB = -1V I C = -500mA, V CE = -1V* I C = -500mA, I B = -50mA* I C = -10 0 mA, V CE = -1V I C = -300mA, V CE = -1V* I C = -500mA, V CE = -1V* MHz pF I C = -10mA, V CE = -5V f =35MHz V CB = -10V, f =1MHz µA V mV fT C obo *Measured under pulsed conditions. Spice parameter data is available upon request for this device TBA