BCX19

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 – MARCH 2001 PARTMARKING DETAILS – BCX19 BCX19R BCX17 U1 U4 BCX19 COMPLEMENTARY TYPES - C B E SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Peak Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CES V CEO V EBO I CM IC IB I BM P TOT T j :T stg VALUE 50 45 5 1000 500 100 200 330 -55 to +150 UNIT V V V mA mA mA mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Cut-Off Current Emitter-Base Cut-Off Current Base-Emitter Voltage Collector-Emitter Saturation Voltage Static Forward Current Transfer Ratio SYMBOL I CBO MIN. TYP. MAX. UNIT 100 200 10 nA µA CONDITIONS. V CB = 20V V CB = 20V, T j=150°C V EB = 5V I EBO µA V BE V CE(sat) 1.2 620 V mV I C = 500mA, V CE = 1V* I C = 500mA, I B = 50mA* I C = 10 0 mA, V CE = 1V I C = 300mA, V CE = 1V* I C = 500mA, V CE = 1V* h FE 100 70 40 200 600 Transition Frequency fT MHz I C = 10mA, V CE = 5V f =35MHz V CB = 10V, f =1MHz Output Capacitance C obo 5.0 pF *Measured under pulsed conditions. TBA