BCX38B

BCX38A/B/C TYPICAL CHARACTERISTICS IC/IB=100 1.0 1.6 +100°C VCE=5V NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp * Ptot=1 Watt BCX38A/B/C hFE - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 -55°C +25°C VCE(sat) - (Volts) 0.8 -55°C +25°C C B E 0.6 +100°C 0.4 +175°C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current IC - Collector Current (Amps) E-Line TO92 Compatible SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 80 60 10 2 800 1 -55 to +200 UNIT V V V A mA W °C 0.2 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) VCE(sat) v IC hFE v IC IC/IB=100 2.0 2.0 VCE=5V Power Dissipation at Tamb=25°C Operating and Storage Temperature Range VBE(sat) - (Volts) VBE - (Volts) -55°C 1.5 +25°C 1.0 +100°C +175°C 0.5 0.001 0.01 0.1 1 10 -55°C 1.5 +25°C 1.0 +100°C +175°C 0.01 0.1 1 10 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO IEBO VCE(sat) VBE(on) hFE 500 1000 2000 4000 5000 10000 3-20 MIN. 80 60 10 100 100 1.25 1.8 TYP. MAX. V V V nA nA V V UNIT CONDITIONS. IC=10µ A, IE=0 IC=10mA, IB=0 IE=10µ A, IC=0 VCB=60V, IE=0 VEB=8V, IC=0 IC=800mA, IB=8mA* IC=800mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* 0.5 0.001 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 10 VBE(on) v IC Single Pulse Test at Tamb=25°C D=1 (D.C.) Thermal Resistance (°C/W) IC - Collector Current (Amps) 150 100 D=0.5 1 Collector-Emitter Saturation Voltage D.C. 1s 100ms 10ms 1.0ms 0.1ms 50 D=0.2 D=0.1 D=0.05 Single Pulse Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio BCX38A BCX38B BCX38C 0.1 0 0.0001 0.001 0.01 0.1 1 10 100 0.01 1 10 100 1000 Pulse Width (seconds) Maximum transient thermal impedance VCE - Collector Voltage (Volts) Safe Operating Area 3-21 BCX38A/B/C TYPICAL CHARACTERISTICS IC/IB=100 1.0 1.6 +100°C VCE=5V NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp * Ptot=1 Watt BCX38A/B/C hFE - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 -55°C +25°C VCE(sat) - (Volts) 0.8 -55°C +25°C C B E 0.6 +100°C 0.4 +175°C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current IC - Collector Current (Amps) E-Line TO92 Compatible SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 80 60 10 2 800 1 -55 to +200 UNIT V V V A mA W °C 0.2 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) VCE(sat) v IC hFE v IC IC/IB=100 2.0 2.0 VCE=5V Power Dissipation at Tamb=25°C Operating and Storage Temperature Range VBE(sat) - (Volts) VBE - (Volts) -55°C 1.5 +25°C 1.0 +100°C +175°C 0.5 0.001 0.01 0.1 1 10 -55°C 1.5 +25°C 1.0 +100°C +175°C 0.01 0.1 1 10 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO IEBO VCE(sat) VBE(on) hFE 500 1000 2000 4000 5000 10000 3-20 MIN. 80 60 10 100 100 1.25 1.8 TYP. MAX. V V V nA nA V V UNIT CONDITIONS. IC=10µ A, IE=0 IC=10mA, IB=0 IE=10µ A, IC=0 VCB=60V, IE=0 VEB=8V, IC=0 IC=800mA, IB=8mA* IC=800mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* 0.5 0.001 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 10 VBE(on) v IC Single Pulse Test at Tamb=25°C D=1 (D.C.) Thermal Resistance (°C/W) IC - Collector Current (Amps) 150 100 D=0.5 1 Collector-Emitter Saturation Voltage D.C. 1s 100ms 10ms 1.0ms 0.1ms 50 D=0.2 D=0.1 D=0.05 Single Pulse Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio BCX38A BCX38B BCX38C 0.1 0 0.0001 0.001 0.01 0.1 1 10 100 0.01 1 10 100 1000 Pulse Width (seconds) Maximum transient thermal impedance VCE - Collector Voltage (Volts) Safe Operating Area 3-21 BCX38A/B/C The maximum permissable operational temperature can be obtained using the equation: 1.0 0.8 RS≤10kΩ RS=47kΩ RS=1MΩ 0.6 RS= ∞ Maximum Power Dissipation - (W) T amb (max ) = Power (max ) − Power (actual ) + 25° C 0.0057 Tamb(max)= Maximum operating ambient temperature Power (max) = Maximum power dissipation figure, for a given VCE and source resistance (RS) 0.4 0.2 1 10 100 Power (actual) = Actual power dissipation in users circuit VCE - Collector-Emitter Voltage - (V) 3-22