BCX38A/B/C
TYPICAL CHARACTERISTICS
IC/IB=100 1.0 1.6 +100°C VCE=5V
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp * Ptot=1 Watt
BCX38A/B/C
hFE - Normalised Gain
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 -55°C +25°C
VCE(sat) - (Volts)
0.8
-55°C +25°C
C B E
0.6 +100°C 0.4 +175°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current
IC - Collector Current (Amps)
E-Line TO92 Compatible SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 80 60 10 2 800 1 -55 to +200 UNIT V V V A mA W °C
0.2 0.001
0.01
0.1
1
10
IC - Collector Current (Amps)
VCE(sat) v IC
hFE v IC
IC/IB=100 2.0 2.0
VCE=5V
Power Dissipation at Tamb=25°C Operating and Storage Temperature Range
VBE(sat) - (Volts)
VBE - (Volts)
-55°C 1.5 +25°C 1.0 +100°C +175°C 0.5 0.001 0.01 0.1 1 10
-55°C 1.5 +25°C 1.0 +100°C +175°C 0.01 0.1 1 10
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO IEBO VCE(sat) VBE(on) hFE 500 1000 2000 4000 5000 10000 3-20 MIN. 80 60 10 100 100 1.25 1.8 TYP. MAX. V V V nA nA V V UNIT CONDITIONS. IC=10µ A, IE=0 IC=10mA, IB=0 IE=10µ A, IC=0 VCB=60V, IE=0 VEB=8V, IC=0 IC=800mA, IB=8mA* IC=800mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V*
0.5 0.001
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VBE(sat) v IC
10
VBE(on) v IC
Single Pulse Test at Tamb=25°C
D=1 (D.C.)
Thermal Resistance (°C/W)
IC - Collector Current (Amps)
150
100
D=0.5
1
Collector-Emitter Saturation Voltage
D.C. 1s 100ms 10ms 1.0ms 0.1ms
50
D=0.2 D=0.1 D=0.05 Single Pulse
Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio BCX38A BCX38B BCX38C
0.1
0 0.0001
0.001
0.01
0.1
1
10
100 0.01 1 10 100 1000
Pulse Width (seconds)
Maximum transient thermal impedance
VCE - Collector Voltage (Volts)
Safe Operating Area
3-21
BCX38A/B/C
TYPICAL CHARACTERISTICS
IC/IB=100 1.0 1.6 +100°C VCE=5V
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp * Ptot=1 Watt
BCX38A/B/C
hFE - Normalised Gain
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 -55°C +25°C
VCE(sat) - (Volts)
0.8
-55°C +25°C
C B E
0.6 +100°C 0.4 +175°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current
IC - Collector Current (Amps)
E-Line TO92 Compatible SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 80 60 10 2 800 1 -55 to +200 UNIT V V V A mA W °C
0.2 0.001
0.01
0.1
1
10
IC - Collector Current (Amps)
VCE(sat) v IC
hFE v IC
IC/IB=100 2.0 2.0
VCE=5V
Power Dissipation at Tamb=25°C Operating and Storage Temperature Range
VBE(sat) - (Volts)
VBE - (Volts)
-55°C 1.5 +25°C 1.0 +100°C +175°C 0.5 0.001 0.01 0.1 1 10
-55°C 1.5 +25°C 1.0 +100°C +175°C 0.01 0.1 1 10
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO IEBO VCE(sat) VBE(on) hFE 500 1000 2000 4000 5000 10000 3-20 MIN. 80 60 10 100 100 1.25 1.8 TYP. MAX. V V V nA nA V V UNIT CONDITIONS. IC=10µ A, IE=0 IC=10mA, IB=0 IE=10µ A, IC=0 VCB=60V, IE=0 VEB=8V, IC=0 IC=800mA, IB=8mA* IC=800mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V*
0.5 0.001
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VBE(sat) v IC
10
VBE(on) v IC
Single Pulse Test at Tamb=25°C
D=1 (D.C.)
Thermal Resistance (°C/W)
IC - Collector Current (Amps)
150
100
D=0.5
1
Collector-Emitter Saturation Voltage
D.C. 1s 100ms 10ms 1.0ms 0.1ms
50
D=0.2 D=0.1 D=0.05 Single Pulse
Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio BCX38A BCX38B BCX38C
0.1
0 0.0001
0.001
0.01
0.1
1
10
100 0.01 1 10 100 1000
Pulse Width (seconds)
Maximum transient thermal impedance
VCE - Collector Voltage (Volts)
Safe Operating Area
3-21
BCX38A/B/C
The maximum permissable operational temperature can be obtained using the equation:
1.0 0.8 RS≤10kΩ RS=47kΩ RS=1MΩ 0.6 RS= ∞
Maximum Power Dissipation - (W)
T amb (max ) =
Power (max ) − Power (actual ) + 25° C 0.0057
Tamb(max)= Maximum operating ambient temperature Power (max) = Maximum power dissipation figure, for a given VCE and source resistance (RS)
0.4 0.2 1 10
100
Power (actual) = Actual power dissipation in users circuit
VCE - Collector-Emitter Voltage - (V)
3-22
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