BF620

SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 5 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE: BF621 PARTMARKING DETAIL – DC BF620 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb = 25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j :T stg VALUE 300 300 5 100 50 1 -65 to +150 UNIT V V V mA mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Colector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I CER I EBO V CE(sat) V BE(sat) h FE fT C obo 50 100 Typical 0.8 Typical MHz pF MIN. 300 300 5 10 20 50 10 10 0.6 0.9 MAX. UNIT V V V nA µA nA µA CONDITIONS. I C=10 µ A, I E=0 I C=1mA, I B=0* I E=100 µ A, I C=0 V CB=200V, I E=0 V CB=200V, I E=0 † V CE=200V, R BE=2.7K Ω V CE=200V, R BE=2.7K Ω † V EB=5V, I C=0 I C=30mA, I B=5mA* I C=20mA, I B=2mA* I C=25mA, V CE=20V* I C=10mA, V CE=10V f=100MHz V CB=30V, f=1MHz µA V V †Tamb=150°C *Measured under pulsed conditions. For typical characteristics graphs see FMMTA42 datasheet. TBA