BF621

SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltage APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE – BF620 PARTMARKING DETAIL – DF BF621 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb = 25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j :T stg VALUE -300 -300 -5 -100 -50 -1 -65 to +150 UNIT V V V mA mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Colector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I CER I EBO V CE(sat) V BE(sat) h FE fT C obo 50 100 Typical 0.8 Typical MHz pF MIN. -300 -300 -5 -10 -20 -50 -10 -10 -0.6 -0.9 MAX. UNIT CONDITIONS. V V V nA µA nA µA I C=-10 µ A, I E=0 I C=-1mA, I B=0* I E=-100 µ A, I C=0 V CB=-200V, I E=0 V CB=-200V, I E=0 † V CE=-200V, R BE=2.7K Ω V CE=-200V, R BE=2.7K Ω † V EB=-5V, I C=0 I C=-30mA, I B=-5mA* I C=-20mA, I B=-2mA* I C=-25mA, V CE=-20V* I C=-10mA, V CE=-10V f=100MHz V CB=-30V, f=1MHz µA V V †Tamb=150°C *Measured under pulsed conditions. For typical characteristics graphs see FMMTA92 datasheet. TBA