BFN16

SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - OCTOBER 1995 7 BFN16 C COMPLEMENTARY TYPE PARTMARKING DETAILS - BFN17 DD E C B SYMBOL VCBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE 250 250 5 500 200 100 1 -65 to +150 UNIT V V V mA mA mA W °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(sat) h FE 25 40 40 Typ.70 Typ.1.5 MHz pF MIN. 250 250 5 100 20 100 0.4 0.9 MAX. UNIT V V V nA µA nA V V CONDITIONS. I C=100 µ A I C=1mA I E=100 µ A V CB=250V V CB=250V, T amb=150 °C V EB=3V I C=20mA, I B=2mA I C =20mA, I B=2mA I C=1mA,V CE=10V* I C=10mA, V CE=10V I C=30mA, V CE=10V I C=20mA, V CE=10V* f=20MHz V CB=30V,f=1MHz fT C obo * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FMMTA42 datasheet 3 - 42