BFN17

SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - OCTOBER 1995 7 BFN17 C COMPLEMENTARY TYPE PARTMARKING DETAILS - BFN16 DG E C B SYMBOL VCBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE -250 -250 -5 -500 -200 -100 -1 -65 to +150 UNIT V V V mA mA mA W °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO MIN. -250 -250 -5 -100 -20 -100 -0.4 -0.9 25 40 40 Typ.100 Typ. 2.5 MHz pF MAX. UNIT V V V nA µA nA V V CONDITIONS. I C=-100 µ A I C=-1mA I E=-100 µ A V CB=-250V V CB=-250V, T amb=150 °C V EB=-3V I C=-20mA, I B=-2mA I C =-20mA, I B=-2mA I C=-1mA, V CE=-10V* I C=-10mA, V CE=-10V* I C=-30mA, V CE=-10V* I C=-20mA, V CE=-10V* f=20MHz V CB=-30V,f=1MHz Collector Cut-Off Current I CBO Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance I EBO V CE(sat) V BE(sat) h FE fT C obo * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FMMTA92 datasheet 3 - 43