BFN19

SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - JANUARY 1996 7 BFN19 C COMPLEMENTARY TYPE - BFN18 PARTMARKING DETAIL - DH E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL VCBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE -300 -300 -5 -500 -200 -100 -1 -65 to +150 UNIT V V V mA mA mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(sat) h FE 25 40 30 Typ. 100 Typ. 2.5 MHz pF MIN. -300 -300 -5 -100 -20 -100 -0.5 -0.9 MAX. V V V nA µA nA V V UNIT CONDITIONS. I C=-100 µ A I C=-1mA* I E=-100 µ A V CB=-250V V CB=-250V, T amb=150°C V EB=-3V I C=-20mA, I B=-2mA I C=-20mA, I B=-2mA I C=-1mA, V CE=-10V* I C=-10mA, V CE=-10V* I C=-30mA, V CE=-10V* I C=-20mA, V CE=-10V f=20MHz V CB=-30V,f=1MHz fT C obo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FMMTA92 datasheet. 3 - 45