BFN36

SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - JANUARY 1996 7 FEATURES: * High VCEO and Low saturation voltage APPLICATIONS: * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE - BFN37 PARTMARKING DETAILS - BFN36 BFN36 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE 250 250 5 500 2 -55 to +150 UNIT V V V mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) 25 40 40 70 1.5 MHz pF MIN. 250 250 5 100 20 100 0.4 0.9 TYP. MAX. V V V nA nA V V UNIT CONDITIONS. IC=100µ A IC=1mA IE=100µ A VCB=200V VCB=200V, Tamb=150°C VEB=4V IC=20mA, IB=2mA IC=20mA, IB=2mA IC=1mA, VCE=10V* IC=10mA, VCE=10V* IC=30mA, VCE=10V* IC=20mA, VCE=10V f=100MHz VCB=30V,f=1MHz µA Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FMMTA42 datasheet. 3 - 46