BSP31

SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 – FEBRUARY 1996 COMPLEMENTARY TYPE – BSP31 – BSP41 BSP33 – BSP43 Device type in full C BSP31 BSP33 PARTMARKING DETAIL – E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base BSP31 Breakdown Voltage BSP33 Collector-Emitter BSP31 Breakdown Voltage BSP33 Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -70 -90 -60 -80 -5 -100 -50 -0.25 -0.5 -1.0 -1.2 30 100 50 300 20 120 100 500 650 pF pF MHz ns ns SYMBOL VCBO VCEO VEBO ICM IC PTOT Tj:Tstg MAX. UNIT V V V V µA BSP31 -70 -60 -5 -2 -1 2 BSP33 -90 -80 UNIT V V V A A W °C -55 to +150 CONDITIONS. IC=-100µA IC=-100µA IC=-10mA IC=-10mA IE=-10µA ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). nA V V V V VCB=-60V VCB=-60V, Tamb=125°C IC =-150mA, IB=-15mA IC =-500mA, IB=-50mA IC=-150mA, IB=-15mA IC =-500mA, IB=-50mA IC =-100µA, VCE =-5V IC =-100mA, VCE =-5V IC =-500mA, VCE =-5V VCB =-10V, f =1MHz VEB =-0.5V, f =1MHz IC=-50mA, VCE=-10V f =35MHz VCC =-20V, IC =-100mA IB1 =-IB2 =-5mA Collector-Emitter Saturation VCE(sat) Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Collector Capacitance Emitter Capacitance Transition Frequency Turn-On Time Turn-Off Time VBE(sat) hFE Cc Ce fT Ton Toff *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 62