BSP33

SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 – MARCH 2001 COMPLEMENTARY TYPE – BSP43 BSP33 C PARTMARKING DETAIL – BSP33 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb = 25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P TOT T j:T stg VALUE -90 -80 -5 -2 -1 2 -55 to +150 UNIT V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO MIN. -90 -80 -5 -100 -50 -0.25 -0.5 -1.0 -1.2 30 100 50 300 20 120 100 500 650 pF pF MHz ns ns MAX. UNIT V V V nA µA V V V V CONDITIONS. I C=-100 µ A I C=-10mA I E=-10 µ A V CB=-60V V CB=-60V, T amb=125°C I C = -150mA, I B=-15mA I C = -500mA, I B=-50mA I C=-150mA, I B=-15mA I C = -500mA, I B=-50mA I C = -100 µ A, V CE = -5V I C = -100mA, V CE = -5V I C = -500mA, V CE = -5V V CB = -10V, f =1MHz V EB = -0.5V, f =1MHz I C=-50mA, V CE=-10V f =35MHz V CC = -20V, I C = -100mA I B1 = -I B2 = -5mA Collector Cut-Off Current I CBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Output Capacitance Input Capacitance Transition Frequency Turn-On Time Turn-Off Time V CE(sat) V BE(sat) h FE C obo C ibo fT T on T off *Measured under pulsed conditions. Spice parameter data is available upon request for this device TBA