BSP40

SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 – FEBRUARY 1996 7 C COMPLEMENTARY TYPES – BSP40 – BSP30 BSP42 – BSP32 PARTMARKING DETAIL – Device type in full BSP40 BSP42 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base BSP40 Breakdown Voltage BSP42 Collector-Emitter BSP40 Breakdown Voltage BSP42 Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Collector Capacitance Emitter Capacitence Transition Frequency Turn-On Time Turn-Off Time SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO VCE(sat) VBE(sat) hFE Cc Ce fT Ton Toff 100 250 1000 10 40 30 MIN. 70 90 60 80 5 100 50 0.25 0.5 1.0 1.2 120 12 90 pF pF MHz ns ns SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg MAX. UNIT V V V V V µA BSP40 70 60 5 2 1 100 2 BSP42 90 80 UNIT V V V A A mA W °C -55 to +150 CONDITIONS. IC=100µA IC=100µA IC=10mA IC=10mA IE=10µA ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). nA V V V V VCB=60V VCB=60V, Tamb=125°C IC =150mA, IB=15mA IC =500mA, IB=50mA IC =150mA, IB=15mA IC =500mA, IB=50mA IC =100µA, VCE=5V IC =100mA, VCE=5V IC =500mA, VCE=5V VCB =10V, f =1MHz VEB =0.5V, f=1MHz IC=50mA, VCE=10V f =35MHz VCC =20V, IC =100mA IB1 =-IB2 =-5mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMT493 datasheet. 3 - 63