BSP41

SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 – NOVEMBER 1995 COMPLEMENTARY TYPES – 7 BSP43 - BSP33 BSP41 - BSP31 PARTMARKING DETAIL – DEVICE TYPE IN FULL C BSP41 BSP43 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base BSP43 Breakdown Voltage BSP41 Collector-Emitter BSP43 Breakdown Voltage BSP41 Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Collector Capacitance Emitter Capacitance Transition Frequency Turn-On Time Turn-Off Time SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO VCE(sat) VBE(sat) hFE Cc Ce fT Ton Toff 100 250 1000 30 100 50 SYMBOL VCBO VCEO VEBO ICM IC IB PTOT Tj:Tstg MIN. 90 70 80 60 5 100 50 0.25 0.5 1.0 1.2 300 12 90 pF pF MHz ns ns MAX. BSP41 70 60 5 2 1 100 2 -55 to +150 UNIT V V V nA µA V V V V CONDITIONS. IC=100µA IC=10mA * IE=10µA VCB=60V VCB=60V, Tamb =125°C IC =150mA, IB =15mA IC =500mA, IB =50mA IC =150mA, IB =15mA IC =500mA, IB =50mA IC =100µA, VCE =5V IC =100mA, VCE =5V IC =500mA, VCE =5V VCB =10V, f=1MHz VEB =0.5V, f=1MHz IC=50mA, VCE=10V f =35MHz VCC =20V, IC =100mA IB1 =IB2 =5mA BSP43 90 80 UNIT V V V A A mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMT493 datasheet. 3 - 64