BSP42

SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 – MARCH 2001 COMPLEMENTARY TYPE – BSP32 ✪ BSP42 C PARTMARKING DETAIL – BSP42 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb = 25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE 90 80 5 2 1 100 2 -55 to +150 UNIT V V V A A mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Output Capacitance Input Capacitance Transition Frequency Turn-On Time Turn-Off Time SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO V CE(sat) V BE(sat) h FE 10 40 30 MIN. 90 80 5 100 50 0.25 0.5 1.0 1.2 120 12 90 100 250 1000 pF pF MHz ns ns MAX. UNIT V V V nA µA V V V V CONDITIONS. I C=100 µ A I C=10mA I E=10 µ A V CB=60V V CB=60V, T amb=125°C I C = 150mA, I B=15mA I C = 500mA, I B=50mA I C = 150mA, I B=15mA I C = 500mA, I B=50mA I C = 100 µ A, V CE=5V I C = 100mA, V CE=5V I C = 500mA, V CE=5V V CB = 10V, f =1MHz V EB = 0.5V, f=1MHz I C=50mA, V CE=10V f =35MHz V CC = 20V, I C = 100mA I B1 = -I B2 = -5mA C obo C ibo fT T on T off *Measured under pulsed conditions. For typical characteristics graphs see FMMT493 datasheet. TBA