BSP75N

BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage On-state resistance Minimum nominal load current(c) Clamping energy VDS=60V 500m SOT223 Maximum nominal load current(a) 1.1A (VIN = 5V) 0.7A (VIN = 5V) 550mJ Description Self-protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch. S S D IN Features • • • • • • • • Short circuit protection with auto restart Over-voltage protection (active clamp) Thermal shutdown with auto restart Over-current protection Input protection (ESD) High continuous current rating Note: The tab is connected to the source pin and must be electrically isolated from the drain pin. Connection of significant copper to the drain pin is recommended for best thermal performance. Load dump protection (actively protects load) Logic level input Ordering information Device BSP75NTA Reel size (inches) 7 Tape width (mm) 12mm embossed Quantity per reel 1000 Device marking BSP75N Issue 4 - September 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com BSP75N Functional block diagram D Over voltage protection IN Over current protection Logic Over temperature protection dV/dt limitation Human body ESD protection S Applications • • • • • Especially suited for loads with a high in-rush current such as lamps and motors. All types of resistive, inductive and capacitive loads in switching applications. C compatible power switch for 12V and 24V DC applications. Automotive rated. Replaces electromechanical relays and discrete circuits. Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low Vds, in order not to compromise the load current during normal operation. The design maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the products ability to self protect itself at low VDS. Issue 4 - September 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com BSP75N Absolute maximum ratings Parameter Continuous drain-source voltage Drain-source voltage for short circuit protection VIN = 5V Drain-source voltage for short circuit protection VIN = 10V Continuous input voltage Peak input voltage Operating temperature range Storage temperature range Power dissipation at TA =25°C (a) Power dissipation at TA =25°C (c) Continuous drain current @ VIN=10V; TA=25°C (a) Continuous drain current @ VIN=5V; TA=25°C (a) Continuous drain current @ VIN=5V; TA=25°C (c) Continuous source current (body diode) (a) Pulsed source current (body diode) (b) Unclamped single pulse inductive energy Load dump protection Electrostatic discharge (human body model) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol VDS VDS(SC) VDS(SC) VIN VIN T j, Tstg PD PD ID ID ID IS IS EAS VLoadDump VESD Limit 60 36 20 -0.2 ... +10 -0.2 ... +20 -40 to +150 -55 to +150 1.5 0.6 1.3 1.1 0.7 2.0 3.3 550 80 4000 E 40/150/56 Unit V V V V V °C °C W W A A A A A mJ V V Thermal resistance Parameter Junction to ambient (a) Junction to ambient (b) Junction to ambient (c) Symbol R JA R JA R JA Limit 83 45 208 Unit °C/W °C/W °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight copper. Allocation of 6cm2 copper 33% to source tab and 66% to drain pin with tab and drain pin electrically isolated. (b) For a device surface mounted on FR4 board as (a) and measured at t5V VIN=+10V, VDS>5V RL=22 , VDD=12V, VIN=0 to +10V RL=22 , VDD=12V, VIN=+10V to 0V RL=22 , VDD=12V, VIN=0 to +10V RL=22 , VDD=12V, VIN=+10V to 0V 1 VPROT TJT 4.5 150 175 1 V °C °C mJ mJ EAS 550 200 ID(ISO)=0.7A, VDD=32V ID(ISO)=0.7A, VDD=32V VIN=0V, -ID=1.4A 1 V NOTES: (*) The drain current is limited to a reduced value when VDS exceeds a safe level. (†) Protection features may operate outside spec for VIN