BSR40-AR1

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 – FEBRUARY 1996 7 COMPLEMENTARY TYPES – BSR40 – BSR30 BSR42 – BSR32 PARTMARKING DETAIL – BSR40 – AR1 BSR42 – AR3 BSR40 BSR42 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg BSR40 70 60 5 2 1 100 1 -65 to +150 BSR42 90 80 UNIT V V V A A mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base BSR40 Breakdown Voltage BSR42 Collector-Emitter BSR40 Breakdown Voltage BSR42 Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Collector Capacitance Emitter Capacitence Transition Frequency Turn-On Time Turn-Off Time SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO VCE(sat) VBE(sat) hFE 10 40 30 MIN. 70 90 60 80 5 100 50 0.25 0.5 1.0 1.2 120 12 90 100 250 1000 pF pF MHz ns ns MAX. UNIT V V V V V nA µA V V V V CONDITIONS. IC=100µA IC=100µA IC=10mA IC=10mA IE=10µA VCB=60V VCB=60V, Tamb=125°C IC =150mA, IB=15mA IC =500mA, IB=50mA IC =150mA, IB=15mA IC =500mA, IB=50mA IC =100µA, VCE=5V IC =100mA, VCE=5V IC =500mA, VCE=5V VCB =10V, f =1MHz VEB =0.5V, f=1MHz IC=50mA, VCE=10V f =35MHz VCC =20V, IC =100mA IB1 =-IB2 =-5mA Cc Ce fT Ton Toff *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMT493 datasheet. 3 - 67