SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
ISSUE 2 SEPTEMBER 95 7
BSS63
C B E
COMPLIMENTARY TYPE PARTMARKING DETAIL
BSS64 BSS63 - T3 BSS63R - T6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transition Frequency SYMBOL V(BR) V(BR)CEO V(BR)EBO IEBO IEBO VCE(sat) VBE(sat) 30 30 50 Typ 85 Typ. 3 MHz MIN. -110 -100 -6 -100 -50 -200 -250 -900 SYMBOL VCBO VCEO VEBO IC PTOT t j:tstg MAX. VALUE -110 -100 -6 -100 330 -55 to +150 UNIT CONDITIONS. V V V nA nA mV mV IC=-10µ A IC=-100µ A* IE=-10µ A VCB=-90V, VCB=-90V,Tamb=150oC VEB=-6V IC=-25mA, IB=-2.5mA IC=-25mA, IB=-2.5mA IC=-10mA, VCE=-1V IC=25mA, VCE=1V VCE=-5V, IC=25mA f=35 MHz VCB=-10V, f=1MHz UNIT V V V mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
µA
hFE fT
Output Capacitance
Cobo
pF
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
PAGE NUMBER
很抱歉,暂时无法提供与“BSS63-T3”相匹配的价格&库存,您可以联系我们找货
免费人工找货