SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS
ISSUE 2 SEPTEMBER 1995 7 PARTMARKING DETAILS BSS66 BSS67 BSS66R BSS67R M6 M7 M8 M9 SYMBOL VCBO VCEO VEBO ICM IC IB PTOT t j:tstg MIN.
40 60 6 50 0.20 0.30 0.65 20 35 50 30 15 40 70 100 60 30 250 300 4 8 Typ. 6 35 200 50 0.85 0.95
BSS66 BSS67
C B VALUE 60 40 6 200 100 50 330 -55 to +150 UNIT V V V mA mA mA mW °C E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL
V(BR)CBO V(BR)EBO ICES VCE(sat) VBE(sat) hFE
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
Collector-Emitter Breakdown Voltage V(BR)CEO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector- Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio BSS66
MAX. UNIT
V V V nA V V V V
CONDITIONS.
IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*,
150
Static Forward Current Transfer Ratio
BSS67
hFE
300
Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Noise Figure
BSS66 BSS67
fT Cobo Cibo N td; tf ts tf
MHz MHz pF pF dB ns ns ns
IC=10mA, VCE=20V f=100MHz VCB=5V, f=100kHz VEB=0.5V, f=100kHz IC=100µA, VCE=5V RS=1kΩ, f=10Hz to15.7 kHz VCC=3V, IC=10mA IB1= IB2 =1mA
Switching times: Delay; Rise Storage Time Fall Time
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PAGE NUMBER
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