SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS
ISSUE 2 SEPTEMBER 95 PARTMARKING DETAIL 7 BSS80B - CH BSS80C - CJ
BSS80B BSS80C
C B E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM PTOT tj:tstg VALUE -60 -40 -5 -800 330 -55 to +150
SOT23 UNIT V V V mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) BSS80B BSS80C hFE fT Cobo td tr ts tf PAGE NUMBER 40 100 200 8 10 40 80 30 MIN. -60 -40 -5 -10 -10 -10 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance
Delay Time
MAX.
UNIT V V
CONDITIONS. IC=-10µ A IC=-10mA IE=-10mA
µA
nA
VCB=-50V, VCB=-50V, Ta=150oC VBE=-3V IC=-150mA,VCE=-10V IC=-150mA,VCE=-10V IC=150mA,VCE=10V IC=150mA,VCE=10V
nA mV V
-0.4 -1.6 120 300
MHz pF ns ns ns ns
VCE=-20V,IC=-50mA f=100MHz VCB=-10V,f=1MHz VCC=-30V, IC=-150mA IB1=-IB2=-15mA
Rise Time Storage Time Fall Time
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