BSS82C

SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 95 PARTMARKING DETAILS 7 BSS82B - CL BSS82C - CM BSS82B BSS82C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) BSS80B BSS80C hFE fT Cobo td tr ts tf 40 100 200 8 10 40 80 30 SYMBOL VCBO VCEO VEBO ICM PTOT tj:tstg MIN. -60 -60 -5 -10 -10 -10 -0.4 -1.6 120 300 MHz pF ns ns ns ns VCC=-30V, IC=-150mA IB1=-IB2=-15mA µA VALUE -60 -60 -5 -800 330 -55 to +150 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Delay Time MAX. UNIT V V CONDITIONS. IC=-10µ A IC=-10mA* IE=-10µ A nA VCB=-50V, VCB=-50V, Tamb=150 °C VBE=-3V IC=-150mA,IB=-15mA* IC=-500mA,IB=50mA* IC=150mA,VCE=10V IC=150mA,VCE=10V VCE=-20V,IC=-50mA f=100MHz VCB=-10V,f=1MHz nA V V Rise Time Storage Time Fall Time * Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2% PAGE NUMBER