BST40

SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – JANUARY 1996 7 COMPLEMENTARY TYPE – BST15 PARTMAKING DETAIL — AT2 BST40 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 300 250 5 1 500 1 -65 to +150 UNIT V V V A mA W °C ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Emitter Cut-Off Current Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Input Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO IEBO ICBO VCE(sat) VBE(sat) hFE fT Cobo Cibo 40 70 2 30 MHz pF pF MIN. 300 250 5 10 20 0.5 1.3 MAX. UNIT V V V µA nA V V CONDITIONS. IC=100µA, IE=0 IC=1mA, IB=0* IE=100µA, IC=0 VEB=5V, IE=0 VCB=300V IC=50mA, IB=4mA IC=50mA, IB=4mA IC=20mA, VCE=10V* IC=10mA, VCE=10V, f=5MHz VCB=10V, f=1MHz VEB=5V, f=1MHz * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FMMTA42 datasheet. 3 - 78