BST51

SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR ISSUE 3 – JANUARY 1996 FEATURES * Fast Switching * High hFE PARTMAKING DETAIL — AS2 BST51 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Pea Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE 80 60 10 1.5 500 100 1 -65 to +150 UNIT V V V A mA mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Emitter Cut-Off Current Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Turn On Time Turn Off Time SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO IEBO ICES VCE(sat) MIN. 80 60 10 10 10 1.3 1.3 1.9 1K 2K 400 Typical 1.5K Typical ns ns MAX. UNIT V V V µA µA V V V CONDITIONS. IC=10µA, IE=0 IC=10mA, IB=0* IE=10µA, IC=0 VEB=8V, IE=0 VCE=60V, IC=0 IC=500mA, IB=0.5mA IC=500mA, IB=0.5mA Tj=150°C IC=500mA, IB=0.5mA IC=150mA, VCE=10V* IC=-500mA, VCE=-10V* IC=500mA IBon=IBoff=0.5mA VBE(sat) hFE ton toff * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device For typical graphs see FMMT38A datasheet 3 - 79