BST61

SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR ISSUE 4 – MARCH 1996 FEATURES * Fast Switching * High hFE PARTMAKING DETAIL — BS2 7 BST61 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Pea Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE -80 -60 -10 -1.5 -500 -100 1 -65 to +150 UNIT V V V A mA mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Emitter Cut-Off Current Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Turn On Time Turn Off Time SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I EBO I CES V CE(sat) MIN. -80 -60 -10 -10 -10 -1.3 -1.3 -1.9 1K 2K 400 Typical 1.5K Typical ns ns MAX. UNIT V V V µA µA V V V CONDITIONS. I C=-10 µ A, I E=0 I C=-10mA, I B=0* I E=-10 µ A, I C=0 V EB=-8V, I E=0 V CE=-60V, I C=0 I C=500mA, I B=-0.5mA I C=500mA, I B=-0.5mA T j=150°C I C=-500mA, I B=-0.5mA I C=-150mA, V CE=-10V* I C=-500mA, V CE=-10V* I C=500mA I Bon=I Boff=-0.5mA V BE(sat) h FE t on t off * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FZTA63 (SOT223) datasheet. 3 - 81