BST82

BST82 SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET I I Issue 2 - October 1997 PARTMARKING DETAIL – O2 BST82 C B E SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain Source Voltage Drain Source Voltage (non repetitive peak tp ≤ 2 ms) Continuous Drain Current at T amb=25°C Drain Current Peak Gate-Source Voltage Max Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS V DS(sm) ID I DM V GS PD T j :T stg VALUE 80 100 175 600 ± 20 300 -55 to +150 UNIT V V mA mA V mW °C ELECTRIAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain Source Breakdown Voltage Gate Source Threshold Voltage Gate Body Leakage Emitter Cut-Off Current Static Drain-Source On-state Resistance Transfer Admittance Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Facsimile: (44)161-627 5467 Zetex GmbH Streitfeldstraße 19 D-81673 München Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 87 Modular Avenue Commack NY11725 Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1995 SYMBOL B VDSS V GS(th) I GSS I DSS R DS(on) | yfs | C iss MIN. 80 1.5 TYP. MAX. UNIT V CONDITIONS. I C=100 µ A I D=1mA, V DS=V GS VGS=20V V DS=60V I D=150mA, V GS=5V I D=175mA, V DS=5V 3.5 100 1 7 150 15 13 3 4 4 30 20 6 10 10 10 V nA µA Ω mS pF pF pF ns ns Input Capacitance (2) Common Source C oss Output Capacitance (2) Reverse Transfer Capacitance (2) Switching Times C rss T on T off V DS=10V, V GS=0V f=1MHz © This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. I D=175mA, V DD=50V V GS=0 to 10V (1) Swithcing times measured at 150Ω source impedance and