BT1

SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAIL – BST40 BT1 7 BST15 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb = 25°C Operating and Storage Temperature Range SYMBOL VCBO V CEO V EBO I CM IC P tot T j:T stg VALUE -200 -200 -4 -1 -500 1 -65 to +150 UNIT V V V A mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I CEO MIN. -200 -200 -4 -1 -50 -20 - 2.0 -0.5 30 15 15 150 MHz pF TYP. MAX. UNIT V V V µA µA µA V V CONDITIONS. I C=-100 µ A I C=-1mA I E=-100 µ A V CB=-175V V CB=-150V V EB=-4V I C=-50mA, I B=-5mA* I C=-30mA, I B=-3mA* I C=-50mA, V CE=-10V* I C=-10mA, V CE=-10V* f = 30MHz V CB=-10V, f=1MHz Emitter Cut-Off Current I EBO Collector-Emitter Saturation Voltage V CE(sat) Static Forward Current h FE Transfer Ratio Transition Frequency Output Capacitance fT C obo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMTA92 datasheet. 3 - 75