BYP54-400

BYP53 / BYP54 25A Silicon Power Rectifier Diode Part no. Description The BYP53/54 are plastic sealed 25A- diodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for parallel connecting in rectifier stacks and backoff-diodes Features • • • • Applications • • • • Forward current 25A Reverse voltage 75V – 800V Hermetic press-fit package Available in different modifications of the package Power supplies Rectifier diode in car generators Rectifier bridges/stacks Back-off-diodes Pinout details BYP53: 1 - cathode 2 - anode BYP54: 1 - anode 2 - cathode Typical application circuit Six pulse bridge connection ~ ~ ~ 1 3 x BYP53-1200 3 x BYP54-1200 2 + - Ordering information Device BYP53-75; …; BYP53-800 BYP54-75; …; BYP54-800 Quantity per box 400 400 Options The package quantities for the different package modifications are included in “PressFitPackageModifications.pdf” Device marking Devices are identified by type. Colour of marking: BYP53- black, BYP54 – red 422........................................……. date code 422 = 2004 week 22 ZETEX BYP53………………………………... diode type 400………………………………….. repetitive peak reverse voltage VRRM (in V) 400 Issue 4 – September 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com BYP53 / BYP54 Absolute maximum ratings (at Tamb = 25°C unless otherwise stated) Parameter BYP53-75 BYP53-100 BYP53-150 BYP53-200 Repetitive peak reverse voltage BYP53-300 BYP53-400 BYP53-500 BYP53-600 BYP53-700 BYP53-800 BYP54-75 BYP54-100 BYP54-150 BYP54-200 BYP54-300 BYP54-400 BYP54-500 BYP54-600 BYP54-700 BYP54-800 IFAV IFSM 350 900 Maximum rated value ∫i²dt 780 Repetitive peak forward current Effective forward current Junction temperature Storage temperature range IFRM=π*IFAV IFRMS TJmax Tstg 79 45 175 - 50 to + 140 A A °C °C A²s VRRM Symbol 75 100 150 200 300 400 500 600 700 800 25 425 Surge forward current A A half-sine wave, ≤ 10 ms TJ = 175°C half-sine wave, ≤ 10 ms half-sine wave, ≤ 10 ms TJ = 175°C half-sine wave, ≤ 10 ms f = >15 Hz V Tc = 140°C Unit Test condition Forward current, arithmetic value Issue 4 – September 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com BYP53 / BYP54 Thermal resistance Parameter Junction to case Symbol RθJC Value 1.2 Unit °C/W Thermal characteristics 30 25 20 15 10 5 0 -50 -25 0 25 50 TC (°C) 75 100 108°C IF (A) 140°C 125 150 Forward current derating diagram Electrical characteristics (at Tamb = 25°C unless otherwise stated) 30 25 20 15 10 5 0 0,75 IF (A) 0,8 0,85 VF (V) 0,9 0,95 1 Forward voltage characteristic Issue 4 – September 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com BYP53 / BYP54 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Forward voltage BYP53-75...800 BYP54-75...800 Symbol VF Min. Typ. 0.95 Max. 1.1 Unit V Test contitions IF = 25 A, measuring time 10ms (half-sine wave) IF = 35 A, Forward voltage BYP53-75...800 (information BYP54-75...800 values) BYP53-75...150 BYP54-75...150 BYP53-200...800 Reverse BYP54-200...800 current BYP53-75...400 BYP54-75...400 BYP53-500...800 BYP54-500...800 Threshold voltage (information value) Slope resistance (information value) VF - 0.66 5.75 1.2 3 V IRRM IRRM V(FO) rF 0.1 1.5 0.25 mA TJ = 140°C, at VRRM mA at VRRM V mΩ TJ = 175°C TJ = 175°C Options: Electrical characteristics for parallel connecting (at Tamb = 25°C unless otherwise stated) Option 1 Parameter Forward voltage difference in one category of forward voltage Reverse current in one category of forward voltage (only for BYP53-300…800 and BYP54-300…800) Symbol ∆VF Min. Typ. Max. 0.05 Unit V Test contitions IF = 25 A, measuring time 10ms (half-sine wave) at VRRM 2 IR - - 0.01 mA Issue 4 – September 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com BYP53 / BYP54 Packaging details Package dimensions Dimensions in millimeters are control dimensions, dimensions in inches are approximate DIM A A1 A2 D D1 D2 D3 MIN 18,00 5,90 2,10 15,50 12,72 11,50 1,33 Millimeters TYP 18,50 6,10 2,30 15,70 12,77 11,70 1,36 Inches TYP 0,728 0,240 0,091 0,618 0,503 0,461 0,054 MAX 19,00 6,30 2,50 15,90 12,82 11,90 1,39 MIN 0,709 0,232 0,083 0,610 0,501 0,453 0,052 MAX 0,748 0,248 0,098 0,626 0,505 0,469 0,055 Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 4 – September 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com