BYP57-75

BYP57 / BYP58 35A Silicon Power Rectifier Diode Part no. Description The BYP57/58 are plastic sealed 35A- diodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for parallel connecting in rectifier stacks and backoff-diodes Features • • • • Applications • • • • Forward current 35A Reverse voltage 75V – 800V Hermetic press-fit package Available in different modifications of the package Power supplies Rectifier diode in car generators Rectifier bridges/stacks Back-off-diodes Pinout details BYP57: 1 - cathode 2 - anode BYP58: 1 - anode 2 - cathode Typical application circuit Six pulse bridge connection ~ ~ ~ 1 3 x BYP57-1200 3 x BYP58-1200 2 + - Ordering information Device BYP57-75; …; BYP57-800 BYP58-75; …; BYP58-800 Quantity per box 400 400 Options The package quantities for the different package modifications are included in “PressFitPackageModifications.pdf” Device marking Devices are identified by type. Colour of marking: BYP57- black, BYP58 – red 422........................................……. date code 422 = 2004 week 22 ZETEX BYP57………………………………... diode type 400………………………………….. repetitive peak reverse voltage VRRM (in V) 400 Issue 4 – September 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com BYP57 / BYP58 Absolute maximum ratings (at Tamb = 25°C unless otherwise stated) Parameter BYP57-75 BYP57-100 BYP57-150 BYP57-200 Repetitive peak reverse voltage BYP57-300 BYP57-400 BYP57-500 BYP57-600 BYP57-700 BYP57-800 BYP58-75 BYP58-100 BYP58-150 BYP58-200 BYP58-300 BYP58-400 BYP58-500 BYP58-600 BYP58-700 BYP58-800 IFAV IFSM 500 1800 Maximum rated value ∫i²dt 1250 Repetitive peak forward current Effective forward current Junction temperature Storage temperature range IFRM=π*IFAV IFRMS TJmax Tstg 110 55 175 - 50 to + 140 A A °C °C A²s VRRM Symbol 75 100 150 200 300 400 500 600 700 800 35 600 Surge forward current A A half-sine wave, ≤ 10 ms TJ = 175°C half-sine wave, ≤ 10 ms half-sine wave, ≤ 10 ms TJ = 175°C half-sine wave, ≤ 10 ms f = >15 Hz V Tc = 140°C Unit Test condition Forward current, arithmetic value Issue 4 – September 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com BYP57 / BYP58 Thermal resistance Parameter Junction to case Symbol RθJC Value 1.0 Unit °C/W Thermal characteristics 40 30 IF (A) 20 10 0 -50 -25 0 25 50 TC (°C) 75 100 108°C 140°C 125 150 Forward current derating diagram Electrical characteristics (at Tamb = 25°C unless otherwise stated) 40 35 30 25 20 15 10 5 0 0,75 IF (A) 0,8 0,85 0,9 VF (V) 0,95 1 1,05 Forward voltage characteristic Issue 4 – September 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com BYP57 / BYP58 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Forward voltage BYP57-75...800 BYP58-75...800 Symbol VF Min. Typ. 1.0 Max. 1.1 Unit V Test contitions IF = 35 A, measuring time 10ms (half-sine wave) IF = 50 A, Forward voltage BYP57-75...800 (information BYP58-75...800 values) BYP57-75...150 BYP58-75...150 BYP57-200...800 Reverse BYP58-200...800 current BYP57-75...400 BYP58-75...400 BYP57-500...800 BYP58-500...800 Threshold voltage (information value) Slope resistance (information value) VF - 0.66 5.75 1.2 3 V IRRM IRRM V(FO) rF 0.1 1.5 0.25 mA TJ = 140°C, at VRRM mA at VRRM V mΩ TJ = 175°C TJ = 175°C Options: Electrical characteristics for parallel connecting (at Tamb = 25°C unless otherwise stated) Option 1 Parameter Forward voltage difference in one category of forward voltage Reverse current in one category of forward voltage (only for BYP57-300…800 and BYP58-300…800) Symbol ∆VF Min. Typ. Max. 0.05 Unit V Test contitions IF = 35 A, measuring time 10ms (half-sine wave) at VRRM 2 IR - - 0.01 mA Issue 4 – September 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com BYP57 / BYP58 Packaging details Package dimensions Dimensions in millimeters are control dimensions, dimensions in inches are approximate DIM A A1 A2 D D1 D2 D3 MIN 18,00 5,90 2,10 15,50 12,72 11,50 1,33 Millimeters TYP 18,50 6,10 2,30 15,70 12,77 11,70 1,36 Inches TYP 0,728 0,240 0,091 0,618 0,503 0,461 0,054 MAX 19,00 6,30 2,50 15,90 12,82 11,90 1,39 MIN 0,709 0,232 0,083 0,610 0,501 0,453 0,052 MAX 0,748 0,248 0,098 0,626 0,505 0,469 0,055 Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 4 – September 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com