BYY58-300

BYY57 / BYY58 35A Silicon Power Rectifier Diode Part no. Description The BYY57/58 are hermetically sealed 35Adiodes, which are available in different reverse voltage classes up to 1500V. The diodes can be delivered with limited forward voltage and reverse current differences for parallel connecting in rectifier stacks and backoff-diodes Features • • • • Applications • • • • Forward current 35A Reverse voltage 75V – 1500V Hermetic press-fit package Available in different modifications of the package Power supplies Rectifier diode in car generators Rectifier bridges/stacks Back-off-diodes Pinout details Typical application circuit Six pulse bridge connection ~ ~ ~ 1 3 x BYY57-1200 3 x BYY58-1200 2 BYY57: 1 – cathode; 2 - anode BYY58: 1 – anode; 2 - cathode + - Ordering information Device BYY57-75; …; BYY57-1500 BYY58-75; …; BYY58-1500 Quantity per box 500 500 Options The package quantities for the different package modifications are included in “PressFitPackageModifications.pdf” Device marking Devices are identified by type. Colour of marking: BYY57- black, BYY58 – red 422........................................……. date code 422 = 2004 week 22 ZETEX BYY57………………………………... diode type 400………………………………….. repetitive peak reverse voltage VRRM (in V) 400 Issue 4 – September 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com BYY57 / BYY58 Absolute maximum ratings (at Tamb = 25°C unless otherwise stated) Parameter BYY57-75 BYY57-100 BYY57-150 BYY57-200 BYY57-300 BYY57-400 BYY57-500 Repetitive peak reverse voltage BYY57-600 BYY57-700 BYY57-800 BYY57-900 BYY57-1000 BYY57-1100 BYY57-1200 BYY57-1300 BYY57-1400 BYY57-1500 BYY58-75 BYY58-100 BYY58-150 BYY58-200 BYY58-300 BYY58-400 BYY58-500 BYY58-600 BYY58-700 BYY58-800 BYY58-900 BYY58-1000 BYY58-1100 BYY58-1200 BYY58-1300 BYY58-1400 BYY58-1500 IFAV IFSM 500 1800 Maximum rated value ∫i²dt 1250 Repetitive peak forward current Effective forward current Junction temperature Storage temperature range IFRM=π*IFAV IFRMS TJmax Tstg 110 55 200 - 50 to + 175 A A °C °C A²s VRRM Symbol 75 100 150 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 35 600 Surge forward current A A half-sine wave, ≤ 10 ms TJ = 175°C half-sine wave, ≤ 10 ms half-sine wave, ≤ 10 ms TJ = 175°C half-sine wave, ≤ 10 ms f = >15 Hz V Tc = 150°C Unit Test condition Forward current, arithmetic value Issue 4 – September 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com BYY57 / BYY58 Thermal resistance Parameter Junction to case Symbol RθJC Value 1.0 Unit °C/W Thermal characteristics 40 35 30 25 20 15 10 5 0 -50 0 50 100 TC (°C) 150 168°C I F (A ) 200°C 200 250 Forward current derating diagram Electrical characteristics (at Tamb = 25°C unless otherwise stated) 40 35 30 25 20 15 10 5 0 0,75 IF (A) 0,8 0,85 0,9 VF (V) 0,95 1 1,05 Forward voltage characteristic Electrical characteristics (at Tamb = 25°C unless otherwise stated) Issue 4 – September 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com BYY57 / BYY58 Parameter BYY57-75...1200 BYY58-75...1200 BYY57-1300...1500 BYY58-1300...1500 BYY57-75...1200 BYY58-75...1200 Forward BYY57-1300...1500 voltage BYY58-1300...1500 (information BYY57-75...1200 values) BYY58-75...1200 BYY57-1300...1500 BYY58-1300...1500 BYY57-75...150 BYY58-75...150 BYY57-200...1500 Reverse BYY58-200...1500 current BYY57-75...400 BYY58-75...400 BYY57-500...1500 BYY58-500...1500 Threshold voltage (information value) Slope resistance (information value) Forward voltage Symbol VF Min. - Typ. 1.0 1.03 0.82 0.85 0.66 5.75 Max. 1.1 Unit V Test contitions IF = 35 A, measuring time 10ms (half-sine wave) IF = 20 A, measuring time 10ms (half-sine wave),TJ = 150°C IF = 50 A 1.15 V 1.2 V 1.25 3 mA 1.5 0.25 mA VF VF IRRM IRRM V(FO) rF 0.1 - TJ = 150°C, at VRRM at VRRM V mΩ TJ = 175°C TJ = 175°C Options: Electrical characteristics for parallel connecting (at Tamb = 25°C unless otherwise stated) Option 1 Parameter Forward voltage difference in one category of forward voltage Reverse current in one category of forward voltage (only for BYY57-300…1500 and BYY58-300…1500) Symbol ∆VF Min. Typ. Max. 0.05 Unit V Test contitions IF = 35 A, measuring time 10ms (half-sine wave) at VRRM 2 IR - - 0.01 mA Packaging details Issue 4 – September 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com BYY57 / BYY58 Package dimensions Dimensions in millimeters are control dimensions, dimensions in inches are approximate DIM A A1 A2 b D D1 D2 L Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com MIN 15,00 5,90 2,10 3,10 15,50 12,75 12,30 3,00 Millimeters TYP 15,50 6,10 2,30 3,40 15,70 12,80 12,50 3,50 MAX 16,00 6,30 2,50 3,70 15,90 12,85 12,70 4,00 Asia Pacific MIN 0,591 0,232 0,083 0,122 0,610 0,502 0,484 0,118 Inches TYP 0,610 0,240 0,091 0,134 0,618 0,504 0,492 0,138 Corporate Headquarters MAX 0,630 0,248 0,098 0,146 0,626 0,506 0,500 0,157 Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 4 – September 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com