BYY58A-600

BYY57A / BYY58A 50A Silicon Power Rectifier Diode Part no. Description The BYY57A/58A are hermetically sealed 50Adiodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for parallel connecting in rectifier stacks and backoff-diodes Features • • • • Applications • • • • Forward current 50A Reverse voltage 75V – 800V Hermetic press-fit package Available in different modifications of the package Power supplies Rectifier diode in car generators Rectifier bridges/stacks Back-off-diodes Pinout details Typical application circuit Six pulse bridge connection ~ ~ ~ 1 3 x BYY57A-700 3 x BYY58A-700 2 BYY57A: 1 – cathode; 2 - anode BYY58A: 1 – anode; 2 - cathode + - Ordering information Device BYY57A-75; …; BYY57A-800 BYY58A-75; …; BYY58A-800 Quantity per box 500 500 Options The package quantities for the different package modifications are included in “PressFitPackageModifications.pdf” Device marking Devices are identified by type. Colour of marking: BYY57A- black, BYY58A – red 422........................................……. date code 422 = 2004 week 22 ZETEX BYY57...……………………………... diode type A400 ……………………………….. 50A diode / repetitive peak reverse voltage VRRM (in V) 400 Issue 2 – November 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com BYY57A / BYY58A Absolute maximum ratings (at Tamb = 25°C unless otherwise stated) Parameter BYY57A-75 BYY57A-100 BYY57A-150 BYY57A-200 Repetitive peak reverse voltage BYY57A-300 BYY57A-400 BYY57A-500 BYY57A-600 BYY57A-700 BYY57A-800 BYY58A-75 BYY58A-100 BYY58A-150 BYY58A-200 BYY58A-300 BYY58A-400 BYY58A-500 BYY58A-600 BYY58A-700 BYY58A-800 IFAV IFSM 800 4050 Maximum rated value ∫i²dt 3200 Repetitive peak forward current Effective forward current Junction temperature Storage temperature range IFRM=π*IFAV IFRMS TJmax Tstg 157 78 200 - 50 to + 175 A A °C °C A²s VRRM Symbol 75 100 150 200 300 400 500 600 700 800 50 900 Surge forward current A A half-sine wave, ≤ 10 ms TJ = 175°C half-sine wave, ≤ 10 ms half-sine wave, ≤ 10 ms TJ = 175°C half-sine wave, ≤ 10 ms f = >15 Hz V Tc = 150°C Unit Test condition Forward current, arithmetic value Issue 2 – November 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com BYY57A / BYY58A Thermal resistance Parameter Junction to case Symbol RθJC Value 0.8 Unit °C/W Thermal characteristics 60 50 40 30 20 10 0 -50 0 50 100 TC (°C) 150 164°C IF (A) 200°C 200 250 Forward current derating diagram Electrical characteristics (at Tamb = 25°C unless otherwise stated) 55 50 45 40 35 30 25 20 15 10 5 0 0,75 IF (A) 0,8 0,85 0,9 0,95 1 1,05 VF (V) Forward voltage characteristic Issue 2 – November 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com BYY57A / BYY58A Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Forward voltage BYY57A-75...800 BYY58A-75...800 Symbol VF Min. Typ. 1.05 Max. 1.15 Unit V Test contitions IF = 50 A, measuring time 10ms (half-sine wave) IF = 20 A, measuring time 10ms (half-sine wave),TJ = 150° IF = 75 A BYY57A-75...800 BYY58A-75...800 Forward voltage (information values) BYY57A-75...800 BYY58A-75...800 BYY57A-75...150 BYY58A-75...150 BYY57A-200...800 Reverse BYY58A-200...800 current BYY57A-75...400 BYY58A-75...400 BYY57A-500...800 BYY58A-500...800 Threshold voltage (information value) Slope resistance (information value) VF - 0.810 - V VF - - 1.2 V IRRM IRRM V(FO) rF - 0.66 4.5 3 mA 1.5 0.25 mA 0.1 V mΩ TJ = 150°C, at VRRM at VRRM TJ = 175°C TJ = 175°C Options: Electrical characteristics for parallel connecting (at Tamb = 25°C unless otherwise stated) Option 1 Parameter Forward voltage difference in one category of forward voltage Reverse current in one category of forward voltage (only for BYY57A-300…800 and BYY58A-300…800) Symbol ∆VF Min. Typ. Max. 0.05 Unit V Test contitions IF = 50 A, measuring time 10ms (half-sine wave) at VRRM 2 IR - - 0.01 mA Issue 2 – November 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com BYY57A / BYY58A Packaging details Package dimensions Dimensions in millimeters are control dimensions, dimensions in inches are approximate DIM A A1 A2 b D D1 D2 L Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com MIN 15,00 5,90 2,10 3,50 15,50 12,75 12,30 3,00 Millimeters TYP 15,50 6,10 2,30 3,80 15,70 12,80 12,50 3,50 MAX 16,00 6,30 2,50 4,10 15,90 12,85 12,70 4,00 Asia Pacific MIN 0,591 0,232 0,083 0,138 0,610 0,502 0,484 0,118 Inches TYP 0,610 0,240 0,091 0,150 0,618 0,504 0,492 0,138 Corporate Headquarters MAX 0,630 0,248 0,098 0,161 0,626 0,506 0,500 0,157 Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 2 – November 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com