FCX1053A

SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSUE 1 - MARCH 1999 FEATURES FCX1053A C * * * * * 2W POWER DISSIPATION 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 21mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 78m at 4.5A Partmarking Detail - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 150 75 5 10 3 1† 2‡ -55 to +150 UNIT V V V A A W W °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2% Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components. 

E C B 053 FCX1053A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL MIN. V(BR)CBO VCES VCEO VCEV V(BR)EBO ICBO IEBO ICES VCE(sat) 150 150 75 150 5 TYP. 250 250 100 250 8.8 0.9 0.3 1.5 21 55 150 160 350 900 825 270 300 300 40 440 450 450 60 20 162 900 140 21 30 10 10 10 30 75 200 210 440 1000 950 MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. IC=100 A IC=100 A IC=10mA IC=100 A, VEB=1V IE=100 A VCB=120V VEB=4V VCES=120V IC=0.2A, IB=20mA* IC=0.5A, IB=20mA* IC=1A, IB=10mA* IC=2A, IB=100mA* IC=4.5A, IB=200mA* IC=3A, IB=100mA* IC=3A, VCE=2V* IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=4.5A, VCE=2V* IC=10A, VCE=2V* Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 1200 Transition Frequency Output Capacitance fT Cobo MHz pF 2% IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz  *Measured under pulsed conditions. Pulse width=300 s. Duty cycle  toff ns IC=2A, IB1=IB2= 20mA, VCC=50V  Switching Times ton ns IC=2A, IB1=IB2= 20mA, VCC=50V




FCX1053A TYPICAL CHARACTERISTICS 0.8 +25°C 0.8 IC/IB=30 VCE(sat) - (V) VCE(sat) - (V) 0.6 IC/IB=10 IC/IB=30 IC/IB=100 0.6 -55°C +25°C +100°C +150°C 0.4 0.4 0.2 0.2 0 1m 10m 100m 1 10 100 0 1m 10m 100m 1 10 100 IC - Collector Current (A) VCE(sat) v IC 600 VCE=2V IC - Collector Current (A) VCE(sat) v IC 1.6 +100°C +25°C -55°C IC/IB=30 hFE - Typical Gain 400 VBE(sat) - (V) 1.2 0.8 0.4 0 1m -55°C +25°C +100°C +150°C 200 0 1m 10m 100m 1 10 100 IC - Collector Current (A) hFE v IC IC - Collector Current (A) VBE(sat) v IC 10m 100m 1 10 100 VCE=2V 1.2 IC - Collector Current (A) 10 VBE(on) - (V) 1 0.8 -55°C +25°C +100°C +150°C 0.4 100m DC 1s 100ms 10ms 1ms 100us 0 1m 10m 100m IC - Collector Current (A) VBE(on) v IC 1 10 100 10m 100m VCE 1 10 100 - Collector Emitter Voltage (V) Safe Operating Area